H76ZYR,Soft Recovery Diode

IT(AV)

800A

VRRM

6000V～6500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled

TC=70℃

125

800

A

VRRM

Repetitive peak reverse voltage

tp=10ms

125

6000

6500

V

IRRM

Repetitive peak current

at VRRM

125

300

mA

IFSM

Surge forward current

10ms half sine wave VR=0

125

18

kA

I2t

I2t for fusing coordination

1620

10³A²s

VFO

Threshold voltage

125

1.90

V

rF

Forward slope resistance

1.10

mΩ

VFM

Peak forward voltage

IFM= 1800A, F=24kN

25

4.80

V

Irm

Reverse recovery current

ITM=2000A, tp=4000μs, di/dt=-60A/μs, VR= 100V

125

900

A

trr

Reverse recovery time

20

μs

Qrr

Recovery charge

5000

μC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 24kN

0.010

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

0.003

Fm

Mounting force

35

47

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

1100

g

Outline

ZT73cT