H76ZYG,Soft Recovery Diode

I_T(AV)

2200A

V_RRM

4000V  4200V

4500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

Tsink=55℃

125

2200

A

IRRM

Repetitive peak current

at VRRM

125

240

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

125

23

kA

I2t

I2t for fusing coordination

2645

A2s* 103

VFO

Threshold voltage

125

1.65

V

rF

Forward slope resistance

0.26

mΩ

VFM

Peak forward voltage

@IFM=3000A,

F=40kN

25

2.80

V

@IFM=5000A

125

2.98

VFRM

Maximum forward recovery voltage

di/dt= 1000A/μs

125

80

V

25

40

V

Irm

Reverse recovery current

IFM=2000A,tp=4000μs, -di/dt=60A/μs, VR=50V

125

400

A

trr

Reverse recovery time

8.0

μs

Qrr

Recovery charge

2000

μC

Rth(j-c)

Thermal resistance Junction to case

At 1800 sine, double side cooled Clamping force40kN

0.010

° /W

Rth(c-h)

Thermal resistance case to heat sink

0.003

Fm

Mounting force

35

47

kN

Tjop

Operating temperature range

-40

125

℃

Tstg

Stored temperature

-40

150

℃

Wt

Weight

1460

g

Outline

ZT73dT