H50ZYG,Soft Recovery Diode

I_T(AV)

700A

V_RRM

4000V  4200V

4500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled

TC=70℃

125

700

A

VRRM

Repetitive peak reverse voltage

tp=10ms

125

4000

4500

V

IRRM

Repetitive peak current

at VRRM

125

100

mA

IFSM

Surge forward current

10ms half sine wave VR=0

125

16

kA

I2t

I2t for fusing coordination

1280

10³A²s

VFO

Threshold voltage

125

1.70

V

rF

Forward slope resistance

0.98

mΩ

VFM

Peak forward voltage

IFM=2000A, F=24kN

25

3.80

V

Irm

Reverse recovery current

ITM=1000A, tp=4000µs, di/dt=-60A/µs, VR=100V

125

610

A

trr

Reverse recovery time

7.0

µs

Qrr

Recovery charge

1500

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 24kN

0.020

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

0.005

Fm

Mounting force

19

26

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

440

g

Outline

ZT50cT