H50KPU,Phase Control Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Double side cooled, TC=70。C

125

600

A

VDRM VRRM

Repetitive peak off-state voltage Repetitive peak reverse voltage

tp=10ms

125

7300

8500

V

IDRM IRRM

Repetitive peak current

@ VDRM @ VRRM

125

200

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

9.8

kA

I2t

I2t for fusing coordination

480

A2s*103

VTO

Threshold voltage

125

1.04

V

rT

On-state slope resistance

2.33

mΩ

VTM

Peak on-state voltage

ITM=1000A, F=24kN

25

2.95

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

2000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 2000A,

Gate pulse tr ≤0.5μs IGM ＝2.0A

125

100

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000µs, di/dt=-5A/µs, VR=100V

125

2500

µC

IGT

Gate trigger current

VA=12V, IA=1A

25

40

300

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

25

200

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=0.67VDRM

125

0.3

V

Rth(j-C)

Thermal resistance Junction to case

At 1800 sine, double side cooled Clamping force 24.0kN

0.022

。C /W

Rth(C-h)

Thermal resistance case to heatsink

0.005

。C /W

Fm

Mounting force

19

24

26

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

560

g

Outline

KT50dT