H38ZPU,Rectifier Diode

I_T(AV)

400A

V_RRM

8100V 8300V

8500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled

TC=85℃

150

400

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

8000

8500

V

IRRM

Repetitive peak current

at VRRM tp=10ms

150

50

mA

IFSM

Surge forward current

10ms half sine wave. VR=0.6VRRM

150

6.0

kA

I2t

I2t for fusing coordination

180

10³A²s

VFO

Threshold voltage

150

1.40

V

rF

Forward slope resistance

2.20

mΩ

VFM

Peak forward voltage

IFM=1000A, F=24kN

25

2.55

V

Qrr

Recovery charge

IFM=1000A, tp=4000µs, di/dt=-20A/µs, VR=100V

150

2500

µC

Rth(j-c)

Thermal resistance Junction to case

double side cooled Clamping force 15kN

0.045

℃/W

Rth(c-h)

Thermal resistance case to heatsink

0.008

Fm

Mounting force

10

20

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

300

g

Outline

ZT33dT