H38KPU-KT33dT,Phase Control Thyristor

IT(AV)

350A

VDRM,VRRM

7500V 8000V

8500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Double side cooled TC=70℃

125

300

A

VDRM VRRM

Repetitive peak off-state voltage Repetitive peak reverse voltage

tp=10ms

125

7300

8500

V

IDRM IRRM

Repetitive peak current

@VDRM @VRRM

125

200

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

4.0

kA

I2t

I2t for fusing coordination

80

A²s* 10³

VTO

Threshold voltage

125

2.02

V

rT

On-state slope resistance

2.19

mΩ

VTM

Peak on-state voltage

ITM=500A, F= 15kN

25

3.00

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

2000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM,

Gate pulse tr ≤0.5μs IGM= 1.5A

125

100

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000μs, di/dt=-5A/μs, VR= 100V

125

1500

μC

IGT

Gate trigger current

VA= 12V, IA= 1A

25

40

300

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

20

200

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=0.67VDRM

125

0.3

V

Rth(j-C)

Thermal resistance Junction to case

At 1800 sine, double side cooled Clamping force15kN

0.045

℃ /W

Rth(C-h)

Thermal resistance case to heatsink

0.008

℃ /W

Fm

Mounting force

10

15

20

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

300

g

Outline

KT33dT