H150KPU,Phase Control Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Double side cooled

TC=70℃

100

4200

A

VDRM VRRM

Repetitive peak off-state voltage Repetitive peak reverse voltage

tp=10ms

125

7300

8500

V

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

100

800

mA

@7000V, DC

25

100

μA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

100

100

kA

I2t

I2t for fusing coordination

50000

103A2s

VTO

Threshold voltage

100

1.56

V

rT

On-state slope resistance

0.12

mΩ

VTM

Peak on-state voltage

ITM=5000A, F=120kN

25

2.40

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

100

2000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM,

Gate pulse tr ≤0.5μs IGM=1.5A

100

600

A/μs

Qrr

Recovery charge

ITM=3000A, tp=4000µs, di/dt=-5A/µs, VR=100V

100

9200

µC

IGT

Gate trigger current

VA=12V, IA=1A

25

40

300

mA

VGT

Gate trigger voltage

0.8

3.5

V

IH

Holding current

20

1000

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

100

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 180。sine, double side cooled Clamping force120kN

0.0020

。C /W

Rth(c-h)

Thermal resistance case to heatsink

0.0005

Fm

Mounting force

165

175

190

kN

Tvj

Junction temperature

-40

100

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

4000

g

Outline

KT140cT