H125ZPR,Rectifier Diode

I_T(AV)

5250A

V_RRM

5200V   5600V

6000V   6500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=100℃

150

5250

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

5100

6500

V

IRRM

Repetitive peak current

at VRRM

150

400

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

84

kA

I2t

I2t for fusing coordination

35280

A²s*10⁴

VFO

Threshold voltage

150

0.81

V

rF

Forward slope resistance

0.12

mΩ

VFM

Peak forward voltage

IFM=5000A, F=140kN

25

1.65

V

Qrr

Recovery charge

IFM=2000A, tp=4000µs, di/dt=-20A/µs, VR=100V

150

20000

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force140kN

0.004

℃/W

Rth(c-h)

Thermal resistance case to heat sink

0.001

Fm

Mounting force

110

140

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

3420

g

Outline

ZT110cT/ ZT110dT