H125KPU,Phase Control Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Double side cooled

TC=55。C

90

2800

A

IDRM IRRM

Repetitive peak current

at VDRM tp= 10ms at VRRM tp= 10ms

90

700

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

90

40

kA

I2t

I2t for fusing coordination

8000

103A2s

VTO

Threshold voltage

90

0.92

V

rT

On-state slope resistance

0.32

mΩ

VTM

Peak on-state voltage

ITM=3000A, F= 120kN

25

1.95

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

90

2000

V/μs

di/dt

Critical rate of rise of on-state current

VDM=67%VDRM,

Gate pulse tr ≤0.5μs IGM= 1.5A

90

100

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000μs, di/dt=-5A/μs, VR=50V

90

6500

μC

IGT

Gate trigger current

VA= 12V, IA= 1A

25

40

300

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

25

200

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

90

0.3

V

Rth(j-c)

Thermal resistance Junction to case

Double side cooled

Clamping force 120kN

0.004

。C /W

Rth(c-h)

Thermal resistance case to heatsink

0.001