H100ZPR,Rectifier Diode

I_T(AV)

4380A

V_RRM

5200V 5600V

6000V 6500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC= 100℃

150

4380

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

5100

6500

V

IRRM

Repetitive peak current

at VRRM

150

300

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

57

kA

I2t

I2t for fusing coordination

16200

A²s* 10³

VFO

Threshold voltage

150

0.88

V

rF

Forward slope resistance

0.16

mΩ

VFM

Peak forward voltage

IFM=5000A, F= 108kN

25

1.70

V

Qrr

Recovery charge

IFM=2000A, tp=4000μs, di/dt=-20A/μs, VR= 100V

150

17000

μC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 108kN

0.0057

℃/W

Rth(c-h)

Thermal resistance case to heat sink

0.0015

Fm

Mounting force

81

108

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

2020

g

Outline

ZT100cT