H100KPU,Phase Control Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(。C)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Double side cooled

TC=70。C

115

2000

A

IDRM IRRM

Repetitive peak current

at VDRM     tp= 10ms at VRRM     tp= 10ms

115

600

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

115

35

kA

I2t

I2t for fusing coordination

6125

103A2s

VTO

Threshold voltage

115

1.32

V

rT

On-state slope resistance

0.52

mΩ

VTM

Peak on-state voltage

ITM= 1500A, F=90kN

25

2.00

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

115

2000

V/μs

di/dt

Critical rate of rise of on-state current

VDM=67%VDRM,

Gate pulse tr ≤0.5μs   IGM= 1.5A

115

200

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000μs, di/dt=-5A/μs, VR=50V

115

5000

μC

IGT

Gate trigger current

VA= 12V, IA= 1A

25

40

300

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

25

200

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

115

0.3

V

Rth(j-c)

Thermal resistance Junction to case

Double side cooled    Clamping force 90kN

0.0057

。C /W

Rth(c-h)

Thermal resistance case to heatsink

0.0015

Fm

Mounting force

81

90

108

kN

Tvj

Junction temperature

-40

115

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

2500

g

Outline

KT100dT