H100KFM,Non Symmetric Fast Turn-off Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Double side cooled,

TC=55°C

125

4500

A

TC=70°C

125

3800

A

VDRM

Repetitive peak off-state voltage

tp=10ms

125

4000

4500

V

VRRM

Repetitive peak reverse voltage

125

1000

3000

V

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

500

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

50

kA

I2t

I2t for fusing coordination

12500

103A2s

VTO

Threshold voltage

125

1.58

V

rT

On-state slope resistance

0.15

mΩ

VTM

Peak on-state voltage

ITM=5000A, F=70kN。

60

25

2.60

V

101

25

2.00

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to4000A

Gate pulse tr ≤0.5μs IGM= 1.5A

125

1200

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000µs, di/dt=-5A/µs, VR=100V

125

2500

4000

µC

tq

Circuit commutated turn-off time

ITM=2000A, tp=4000µs, VR= 100V dv/dt=30V/µs, di/dt=-5A/µs

125

60

100

200

µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

50

300

mA

VGT

Gate trigger voltage

0.8

3.5

V

IH

Holding current

20

1000

mA

IL

Latching current

1500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.25

V

Rth(j-c)

Thermal resistance   junction to case

Double side cooled    Clamping force 40kN

0.005

℃/W

Rth(c-h)

Thermal resistance   case to heat sink

0.0015

Fm

Mounting force

81

108

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

1880

g

Outline

KT100cT