GD950HTX75P6HT

Brief introduction

IGBT module,produced by STARPOWER. 950V 750A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	750	V
VGES	Gate-Emitter Voltage	±20	V
ICN	Implemented Collector Current	950	A
IC	Collector Current @ TF=100oC	450	A
ICM	Pulsed Collector Current tp=1ms	1900	A
PD	Maximum Power Dissipation @ TF=75oC Tj=175oC	1162	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	750	V
IFN	Implemented Collector Current	950	A
IF	Diode Continuous Forward Current	450	A
IFM	Diode Maximum Forward Current tp=1ms	1900	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature continuous For 10s within a period of 30s,occurrence maximum 3000 times over lifetime	-40 to +150 +150 to +175	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=450A,VGE=15V, Tj=25oC		1.35	1.60	V
		IC=450A,VGE=15V, Tj=150oC		1.60
		IC=450A,VGE=15V, Tj=175oC		1.65
		IC=950A,VGE=15V, Tj=25oC		1.75
		IC=950A,VGE=15V, Tj=175oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=9.60mA,VCE=VGE, Tj=25oC	4.9	5.8	6.5	V
VGE(th)	Gate-Emitter Threshold Voltage	IC=9.60mA,VCE=VGE, Tj=175 oC		4.1
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			0.7		Ω
Cies	Input Capacitance	VCE=50V,f=100kHz, VGE=0V		69.1		nF
Coes	Output Capacitance			2.31		nF
Cres	Reverse Transfer Capacitance			1.05		nF
QG	Gate Charge	VCE =400V,IC =450A, VGE=-8…+15V		3.29		μC
td(on)	Turn-On Delay Time	VCC=400V,IC=450A, RG=2.4Ω, VGE=-8V/+15V, LS=24nH, Tj=25oC		191		ns
tr	Rise Time			83		ns
td(off)	Turn-Off Delay Time			543		ns
tf	Fall Time			158		ns
Eon	Turn-On Switching Loss			16.8		mJ
Eoff	Turn-Off Switching Loss			20.5		mJ
td(on)	Turn-On Delay Time	VCC=400V,IC=450A, RG=2.4Ω, VGE=-8V/+15V, LS=24nH, Tj=150oC		207		ns
tr	Rise Time			96		ns
td(off)	Turn-Off Delay Time			594		ns
tf	Fall Time			190		ns
Eon	Turn-On Switching Loss			22.5		mJ
Eoff	Turn-Off Switching Loss			24.5		mJ
td(on)	Turn-On Delay Time	VCC=400V,IC=450A, RG=2.4Ω, VGE=-8V/+15V, LS=24nH, Tj=175oC		208		ns
tr	Rise Time			103		ns
td(off)	Turn-Off Delay Time			613		ns
tf	Fall Time			190		ns
Eon	Turn-On Switching Loss			26.7		mJ
Eoff	Turn-Off Switching Loss			26.9		mJ
ISC	SC Data	tP≤6μs,VGE=15V,		4800		A
		Tj=25oC,VCC=400V, VCEM≤750V

Diode Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=450A,VGE=0V,Tj=25oC		1.40	1.65	V
		IF=450A,VGE=0V,Tj=150oC		1.35
		IF=450A,VGE=0V,Tj=175oC		1.30
		IF=950A,VGE=0V,Tj=25oC		1.75
		IF=950A,VGE=0V,Tj=175oC		1.75
Qr	Recovered Charge	VR=400V,IF=450A, -di/dt=5520A/μs,VGE=-8V LS=24nH,Tj=25oC		16.4		μC
IRM	Peak Reverse Recovery Current			222		A
Erec	Reverse Recovery Energy			4.50		mJ
Qr	Recovered Charge	VR=400V,IF=450A, -di/dt=4810A/μs,VGE=-8V LS=24nH,Tj=150oC		32.2		μC
IRM	Peak Reverse Recovery Current			283		A
Erec	Reverse Recovery Energy			8.19		mJ
Qr	Recovered Charge	VR=400V,IF=450A, -di/dt=4630A/μs,VGE=-8V LS=24nH,Tj=175oC		36.3		μC
IRM	Peak Reverse Recovery Current			292		A
Erec	Reverse Recovery Energy			9.03		mJ

NTC Characteristics TF=25oC unless otherwise noted

Module Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		8		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.75		mΩ
p	Maximum Pressure In Cooling Circuit Tbaseplate<40oC Tbaseplate >40oC (relative pressure)			2.5 2.0	bar
RthJF	Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC		0.075 0.118	0.086 0.136	K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4	3.6 1.8		4.4 2.2	N.m
G	Weight of Module		750		g