GD900SGF120A3SN,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

1466

900

A

ICM

Pulsed Collector Current tp=1ms

1800

A

PD

Maximum Power Dissipation @ Tvj=175oC

5.34

kW

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

900

A

IFM

Diode Maximum Forward Current tp=1ms

1800

A

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=900A,VGE=15V, Tvj=25oC

2.00

2.45

V

IC=900A,VGE=15V, Tvj=125oC

2.50

IC=900A,VGE=15V, Tvj=150oC

2.65

VGE(th)

Gate-Emitter Threshold Voltage

IC=32.0mA,VCE=VGE, Tvj=25oC

5.2

6.0

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

1.44

Ω

td(on)

Turn-On Delay Time

VCC=600V,IC=900A, RGon=1Ω, RGoff=2Ω, Ls=50nH,

VGE=-10/+15V, Tvj=25oC

520

ns

tr

Rise Time

127

ns

td(off)

Turn-Off Delay Time

493

ns

tf

Fall Time

72

ns

Eon

Turn-On Switching Loss

76.0

mJ

Eoff

Turn-Off Switching Loss

85.0

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A, RGon=1Ω, RGoff=2Ω, Ls=50nH,

VGE=-10/+15V, Tvj=125oC

580

ns

tr

Rise Time

168

ns

td(off)

Turn-Off Delay Time

644

ns

tf

Fall Time

89

ns

Eon

Turn-On Switching Loss

127

mJ

Eoff

Turn-Off Switching Loss

98.5

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=900A, RGon=1Ω, RGoff=2Ω, Ls=50nH,

VGE=-10/+15V, Tvj=150oC

629

ns

tr

Rise Time

176

ns

td(off)

Turn-Off Delay Time

676

ns

tf

Fall Time

96

ns

Eon

Turn-On Switching Loss

134

mJ

Eoff

Turn-Off Switching Loss

99.0

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=900A,VGE=0V,Tvj=25oC

1.95

2.40

V

IF=900A,VGE=0V,Tvj=125oC

2.00

IF=900A,VGE=0V,Tvj=150oC

2.05

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=7100A/μs, Ls=50nH, VGE=-10V,

Tvj=25oC

80

μC

IRM

Peak Reverse

Recovery Current

486

A

Erec

Reverse Recovery Energy

35.0

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=5180A/μs, Ls=50nH, VGE=-10V,

Tvj=125oC

153

μC

IRM

Peak Reverse

Recovery Current

510

A

Erec

Reverse Recovery Energy

64.0

mJ

Qr

Recovered Charge

VR=600V,IF=900A,

-di/dt=4990A/μs, Ls=50nH, VGE=-10V,

Tvj=150oC

158

μC

IRM

Peak Reverse

Recovery Current

513

A

Erec

Reverse Recovery Energy

74.0

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

12

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.19

mΩ

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

28.1 44.1

K/kW

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

9.82 15.4 6.0

K/kW

M

Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6

1.8 8.0 4.25

2.1

10

5.75

N.m

G

Weight of Module

1050

g