GD820HFA75N6HY

Brief introduction

IGBT module,produced by STARPOWER. 820V 750A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	750	V
VGES	Gate-Emitter Voltage	±20	V
ICN	Implemented Collector Current	820	A
IC	Collector Current @ TF=95oC Tvj=175oC	450	A
ICRM	Repetitive Peak Collector Current tp limited by Tvjop	1640	A
PD	Maximum Power Dissipation @ TF=65oC Tvj=175oC	909	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	750	V
IFN	Implemented Collector Current	820	A
IF	Diode Continuous Forward Current	450	A
IFRM	Repetitive Peak Forward Current tp limited by Tvjop	1640	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature continuous	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V
dCreep	Terminal to Heatsink Terminal to Terminal	7.3 7.3	mm
dClear	Terminal to Heatsink Terminal to Terminal	7.3 4.0	mm

IGBT Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=680A,VGE=15V, Tvj=25oC		1.25	1.50	V
		IC=680A,VGE=15V, Tvj=150oC		1.35
		IC=680A,VGE=15V, Tvj=175oC		1.40
		IC=820A,VGE=15V, Tvj=25oC		1.30
		IC=820A,VGE=15V, Tvj=175oC		1.50
VGE(th)	Gate-Emitter Threshold Voltage	IC=12.9mA,VCE=VGE, Tvj=25oC	5.5	6.5	7.0	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.0		Ω
Cies	Input Capacitance	VCE=50V,f=100kHz, VGE=0V		72.3		nF
Coes	Output Capacitance			1.51		nF
Cres	Reverse Transfer Capacitance			0.32		nF
QG	Gate Charge	VCE =400V, IC=680A, VGE=-10…+15V		4.10		μC
td(on)	Turn-On Delay Time	VCC=400V,IC=450A, RG=2.4Ω,LS=20nH, VGE=-8V/+15V, Tvj=25oC		483		ns
tr	Rise Time			60		ns
td(off)	Turn-Off Delay Time			664		ns
tf	Fall Time			67		ns
Eon	Turn-On Switching Loss			16.3		mJ
Eoff	Turn-Off Switching Loss			17.4		mJ
td(on)	Turn-On Delay Time	VCC=400V,IC=450A, RG=2.4Ω,LS=20nH, VGE=-8V/+15V, Tvj=150oC		507		ns
tr	Rise Time			76		ns
td(off)	Turn-Off Delay Time			750		ns
tf	Fall Time			125		ns
Eon	Turn-On Switching Loss			26.3		mJ
Eoff	Turn-Off Switching Loss			22.1		mJ
td(on)	Turn-On Delay Time	VCC=400V,IC=450A, RG=2.4Ω,LS=20nH, VGE=-8V/+15V, Tvj=175oC		509		ns
tr	Rise Time			79		ns
td(off)	Turn-Off Delay Time			764		ns
tf	Fall Time			139		ns
Eon	Turn-On Switching Loss			27.6		mJ
Eoff	Turn-Off Switching Loss			23.0		mJ
ISC	SC Data	tP≤3μs,VGE=15V, Tj=175oC,VCC=450V, VCEM≤750V		3300		A

Diode Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=680A,VGE=0V,Tvj=25oC		1.60	2.05	V
		IF=680A,VGE=0V,Tvj=150oC		1.60
		IF=680A,VGE=0V,Tvj=175oC		1.55
		IF=820A,VGE=0V,Tvj=25oC		1.70
		IF=820A,VGE=0V,Tvj=175oC		1.65
Qr	Recovered Charge	VR=400V,IF=450A, -di/dt=8350A/μs,LS=20nH, VGE=-8V,Tvj=25oC		12.4		μC
IRM	Peak Reverse Recovery Current			273		A
Erec	Reverse Recovery Energy			3.45		mJ
Qr	Recovered Charge	VR=400V,IF=450A, -di/dt=6670A/μs,LS=20nH, VGE=-8V,Tvj=150oC		27.7		μC
IRM	Peak Reverse Recovery Current			319		A
Erec	Reverse Recovery Energy			6.51		mJ
Qr	Recovered Charge	VR=400V,IF=450A, -di/dt=6410A/μs,LS=20nH, VGE=-8V,Tvj=175oC		31.8		μC
IRM	Peak Reverse Recovery Current			334		A
Erec	Reverse Recovery Energy			7.26		mJ

PTC Characteristics TF=25oC unless otherwise noted

Module Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		5		nH
p	Maximum Pressure In Cooling Circuit			2.5	bar
RthJF	Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=2.67 L/min,TF=65oC		0.105 0.157	0.121 0.181	K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5	3.6 5.4		4.4 6.6	N.m
G	Weight of Module		220		g