GD800HFX120C6HA,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=100oC

800

A

ICM

Pulsed Collector Current tp=1ms

1600

A

PD

Maximum Power Dissipation @ Tj=175oC

5172

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

800

A

IFM

Diode Maximum Forward Current tp=1ms

1600

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=800A,VGE=15V, Tj=25oC

1.95

2.40

V

IC=800A,VGE=15V, Tj=125oC

2.30

IC=800A,VGE=15V, Tj=150oC

2.40

VGE(th)

Gate-Emitter Threshold Voltage

IC=24.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.7

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

62.1

nF

Cres

Reverse Transfer Capacitance

1.74

nF

QG

Gate Charge

VGE=-15…+15V

4.66

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG=1.0Ω, VGE=±15V, LS=40nH,Tj=25oC

266

ns

tr

Rise Time

98

ns

td(off)

Turn-Off Delay Time

394

ns

tf

Fall Time

201

ns

Eon

Turn-On Switching Loss

108

mJ

Eoff

Turn-Off Switching Loss

73.8

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG=1.0Ω, VGE=±15V, LS=40nH,Tj=125oC

280

ns

tr

Rise Time

115

ns

td(off)

Turn-Off Delay Time

435

ns

tf

Fall Time

275

ns

Eon

Turn-On Switching Loss

153

mJ

Eoff

Turn-Off Switching Loss

91.3

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=800A, RG=1.0Ω, VGE=±15V, LS=40nH ,Tj=150oC

282

ns

tr

Rise Time

117

ns

td(off)

Turn-Off Delay Time

446

ns

tf

Fall Time

290

ns

Eon

Turn-On Switching Loss

165

mJ

Eoff

Turn-Off Switching Loss

94.4

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=800V, VCEM≤1200V

2400

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=800A,VGE=0V,Tj=25oC

2.00

2.45

V

IF=800A,VGE=0V,Tj=125oC

2.15

IF=800A,VGE=0V,Tj=150oC

2.20

Qr

Recovered Charge

VCC=600V,IF=800A,

-di/dt=5800A/μs,VGE=-15V, LS=40nH,Tj=25oC

48.1

μC

IRM

Peak Reverse

Recovery Current

264

A

Erec

Reverse Recovery Energy

18.0

mJ

Qr

Recovered Charge

VCC=600V,IF=800A,

-di/dt=4800A/μs,VGE=-15V, LS=40nH,Tj=125oC

95.3

μC

IRM

Peak Reverse

Recovery Current

291

A

Erec

Reverse Recovery Energy

35.3

mJ

Qr

Recovered Charge

VCC=600V,IF=800A,

-di/dt=4550A/μs,VGE=-15V, LS=40nH,Tj=150oC

107

μC

IRM

Peak Reverse

Recovery Current

293

A

Erec

Reverse Recovery Energy

38.5

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.029 0.050

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.028 0.049 0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0 3.0

6.0 6.0

N.m

G

Weight of Module

350

g