1200V 600A，Package:C2
Brief introduction
IGBT module,produced by STARPOWER. 1200V 800A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage Transient Gate-Emitter Voltage |
±20 ±30 |
V |
IC |
Collector Current @ TC=25oC @ TC=95oC |
1280 800 |
A |
ICM |
Pulsed Collector Current tp=1ms |
1600 |
A |
PD |
Maximum Power Dissipation @ Tvj=175oC |
3191 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
800 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1600 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +175 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=800A,VGE=15V, Tvj=25oC |
|
1.30 |
1.75 |
V |
IC=800A,VGE=15V, Tvj=125oC |
|
1.45 |
|
|||
IC=800A,VGE=15V, Tvj=150oC |
|
1.50 |
|
|||
IC=800A,VGE=15V, Tvj=175oC |
|
1.55 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=32.0mA,VCE=VGE, Tvj=25oC |
5.5 |
6.1 |
7.0 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.38 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
156 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
1.10 |
|
nF |
|
QG |
Gate Charge |
VGE=-8…+15V |
|
10.3 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A, RG=1.2Ω, VGE=-8V/+15V, Tvj=25oC |
|
338 |
|
ns |
tr |
Rise Time |
|
174 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1020 |
|
ns |
|
tf |
Fall Time |
|
100 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
65.2 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
88.8 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A, RG=1.2Ω, VGE=-8V/+15V, Tvj=125oC |
|
398 |
|
ns |
tr |
Rise Time |
|
203 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1140 |
|
ns |
|
tf |
Fall Time |
|
183 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
96.6 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
109 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A, RG=1.2Ω, VGE=-8V/+15V, Tvj=150oC |
|
413 |
|
ns |
tr |
Rise Time |
|
213 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1140 |
|
ns |
|
tf |
Fall Time |
|
195 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
105 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
113 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=800A, RG=1.2Ω, VGE=-8V/+15V, Tvj=175oC |
|
419 |
|
ns |
tr |
Rise Time |
|
223 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
1142 |
|
ns |
|
tf |
Fall Time |
|
205 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
110 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
115 |
|
mJ |
|
|
|
|
|
|
||
ISC |
SC Data |
tP≤8μs,VGE=15V, Tvj=150oC,VCC=800V, VCEM≤1200V |
|
3300 |
|
A |
ISC |
SC Data |
tP≤6μs,VGE=15V, Tvj=175oC,VCC=800V, VCEM≤1200V |
|
3000 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=800A,VGE=0V,Tvj=25oC |
|
1.85 |
2.30 |
V |
IF=800A,VGE=0V,Tvj=125oC |
|
1.85 |
|
|||
IF=800A,VGE=0V,Tvj=150oC |
|
1.85 |
|
|||
IF=800A,VGE=0V,Tvj=175oC |
|
1.85 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=800A, -di/dt=5510A/μs,VGE=-8V, Tvj=25oC |
|
28.6 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
311 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
13.9 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=800A, -di/dt=4990A/μs,VGE=-8V, Tvj=125oC |
|
56.8 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
378 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
23.7 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=800A, -di/dt=4860A/μs,VGE=-8V, Tvj=150oC |
|
66.3 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
395 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
26.7 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=800A, -di/dt=4790A/μs,VGE=-8V, Tvj=175oC |
|
72.1 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
403 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
28.6 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
20 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.42 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
0.047 0.083 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.031 0.055 0.010 |
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
320 |
|
g |
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