GD75PFX170C6SG,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1700V 75A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT-inverter

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	139 75	A
ICM	Pulsed Collector Current tp=1ms	150	A
PD	Maximum Power Dissipation @ Tvj=175oC	559	W

Diode-inverter

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	75	A
IFM	Diode Maximum Forward Current tp=1ms	150	A

Diode-rectifier

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	2000	V
IO	Average Output Current 50Hz/60Hz,sine wave	75	A
IFSM	Surge Forward Current tp=10ms @ Tvj=25oC @ Tvj=150oC	1440 1206	A
I2t	I2t-value,tp=10ms @ Tvj=25oC @ Tvj=150oC	10368 7272	A2s

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature(inverter) Maximum Junction Temperature (rectifier)	175 150	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=75A,VGE=15V, Tvj=25oC		1.85	2.20	V
		IC=75A,VGE=15V, Tvj=125oC		2.25
		IC=75A,VGE=15V, Tvj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=3.0mA,VCE=VGE, Tvj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			8.5		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		9.03		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.22		nF
QG	Gate Charge	VGE=-15 …+15V		0.71		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=75A, RG=6.8Ω,VGE=±15V, LS=46nH,Tvj=25oC		236		ns
tr	Rise Time			42		ns
td(off)	Turn-Off Delay Time			356		ns
tf	Fall Time			363		ns
Eon	Turn-On Switching Loss			17.3		mJ
Eoff	Turn-Off Switching Loss			11.7		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=75A, RG=6.8Ω,VGE=±15V, LS=46nH,Tvj=125oC		252		ns
tr	Rise Time			48		ns
td(off)	Turn-Off Delay Time			420		ns
tf	Fall Time			485		ns
Eon	Turn-On Switching Loss			27.1		mJ
Eoff	Turn-Off Switching Loss			16.6		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=75A, RG=6.8Ω,VGE=±15V, LS=46nH,Tvj=150oC		275		ns
tr	Rise Time			50		ns
td(off)	Turn-Off Delay Time			432		ns
tf	Fall Time			524		ns
Eon	Turn-On Switching Loss			27.9		mJ
Eoff	Turn-Off Switching Loss			17.7		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=150oC,VCC=1000V , VCEM≤1700V		300		A

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=75A,VGE=0V,Tvj=25oC		1.80	2.25	V
		IF=75A,VGE=0V,Tvj=125oC		1.90
		IF=75A,VGE=0V,Tvj=150oC		1.95
Qr	Recovered Charge	VR=900V,IF=75A, -di/dt=1290A/μs,VGE=-15V LS=46nH,Tvj=25oC		10.3		μC
IRM	Peak Reverse Recovery Current			84		A
Erec	Reverse Recovery Energy			7.44		mJ
Qr	Recovered Charge	VR=900V,IF=75A, -di/dt=1100A/μs,VGE=-15V LS=46nH,Tvj=125oC		20.5		μC
IRM	Peak Reverse Recovery Current			87		A
Erec	Reverse Recovery Energy			16.1		mJ
Qr	Recovered Charge	VR=900V,IF=75A, -di/dt=1060A/μs,VGE=-15V LS=46nH,Tvj=150oC		22.5		μC
IRM	Peak Reverse Recovery Current			97		A
Erec	Reverse Recovery Energy			19.2		mJ

Diode-rectifier Characteristics TC=25oC unless otherwise noted

NTC Characteristics TC=25oC unless otherwise noted

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
RthJC	Junction-to-Case (perIGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier)			0.268 0.481 0.289	K/W
RthCH	Case-to-Heatsink (perIGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per Module)		0.106 0.190 0.114 0.009		K/W
M	Mounting Torque, Screw:M5	3.0		6.0	N.m
G	Weight of Module		300		g