GD750HFA120C6S,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 800A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=100oC	750	A
ICM	Pulsed Collector Current tp=1ms	1500	A
PD	Maximum Power Dissipation @ Tvj=175oC	3125	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	900	A
IFM	Diode Maximum Forward Current tp=1ms	1500	A
IFSM	Surge Forward Current tp=10ms @ Tvj=25oC @ Tvj=150oC	3104 2472	A
I2t	I2t-value,tp=10ms @ Tvj=25oC @ Tvj=150oC	48174 30554	A2s

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=750A,VGE=15V, Tvj=25oC		1.35	1.85	V
		IC=750A,VGE=15V, Tvj=125oC		1.55
		IC=750A,VGE=15V, Tvj=175oC		1.55
VGE(th)	Gate-Emitter Threshold Voltage	IC=24.0mA,VCE=VGE, Tvj=25oC	5.5	6.3	7.0	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			0.5		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		85.2		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=100kHz, VGE=0V		0.45		nF
QG	Gate Charge	VGE=-15…+15V		6.15		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=750A, RG=0.5Ω, VGE=-8V/+15V, LS=40nH,Tvj=25oC		238		ns
tr	Rise Time			76		ns
td(off)	Turn-Off Delay Time			622		ns
tf	Fall Time			74		ns
Eon	Turn-On Switching Loss			68.0		mJ
Eoff	Turn-Off Switching Loss			52.8		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=750A, RG=0.5Ω, VGE=-8V/+15V, LS=40nH,Tvj=125oC		266		ns
tr	Rise Time			89		ns
td(off)	Turn-Off Delay Time			685		ns
tf	Fall Time			139		ns
Eon	Turn-On Switching Loss			88.9		mJ
Eoff	Turn-Off Switching Loss			67.4		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=750A, RG=0.5Ω, VGE=-8V/+15V, LS=40nH,Tvj=175oC		280		ns
tr	Rise Time			95		ns
td(off)	Turn-Off Delay Time			715		ns
tf	Fall Time			166		ns
Eon	Turn-On Switching Loss			102		mJ
Eoff	Turn-Off Switching Loss			72.7		mJ
ISC	SC Data	tP≤8μs,VGE=15V, Tvj=150oC,VCC=800V, VCEM≤1200V		2500		A
ISC	SC Data	tP≤6μs,VGE=15V, Tvj=175oC,VCC=800V, VCEM≤1200V		2400		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=750A,VGE=0V,Tvj=25oC		1.60	2.05	V
		IF=750A,VGE=0V,Tvj=125oC		1.65
		IF=750A,VGE=0V,Tvj=175oC		1.65
Qr	Recovered Charge	VR=600V,IF=750A, -di/dt=6500A/μs,VGE=-8V, LS=40nH,Tvj=25oC		79.7		μC
IRM	Peak Reverse Recovery Current			369		A
Erec	Reverse Recovery Energy			23.3		mJ
Qr	Recovered Charge	VR=600V,IF=750A, -di/dt=5600A/μs,VGE=-8V, LS=40nH,Tvj=125oC		120		μC
IRM	Peak Reverse Recovery Current			400		A
Erec	Reverse Recovery Energy			39.5		mJ
Qr	Recovered Charge	VR=600V,IF=750A, -di/dt=5200A/μs,VGE=-8V, LS=40nH,Tvj=175oC		151		μC
IRM	Peak Reverse Recovery Current			423		A
Erec	Reverse Recovery Energy			49.7		mJ

NTC Characteristics TC=25oC unless otherwise noted

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		20		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.80		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.048 0.088	K/W
RthCH	Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.028 0.051 0.009		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5	3.0 3.0		6.0 6.0	N.m
G	Weight of Module		350		g