GD720HTA120P6HLT,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 720A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
ICN	Implemented Collector Current	720	A
IC	Collector Current @ TF=65oC	600	A
ICM	Pulsed Collector Current tp=1ms	1440	A
PD	Maximum Power Dissipation @ TF=75oC Tvj=175oC	1204	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IFN	Implemented Collector Current	720	A
IF	Diode Continuous Forward Current	600	A
IFM	Diode Maximum Forward Current tp=1ms	1440	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature continuous For 10s within a period of 30s,occurrence maximum 3000 times over lifetime	-40 to +150 +150 to +175	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	3000	V

IGBT Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=600A,VGE=15V, Tvj=25oC		1.50		V
		IC=600A,VGE=15V, Tvj=150oC		1.80
		IC=600A,VGE=15V, Tvj=175oC		1.85
		IC=720A,VGE=15V, Tvj=25oC		1.60
		IC=720A,VGE=15V, Tvj=175oC		2.05
VGE(th)	Gate-Emitter Threshold Voltage	IC=15.6mA,VCE=VGE, Tvj=25oC		6.0		V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.67		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		48.7		nF
Coes	Output Capacitance			1.55		nF
Cres	Reverse Transfer Capacitance			0.26		nF
QG	Gate Charge	VCE =800V,IC =600A, VGE=-8…+15V		3.52		μC
td(on)	Turn-On Delay Time	VCC=800V,IC=600A, RGon=3.0Ω,RGoff=1.0Ω, LS=24nH, VGE=-8V/+15V, Tvj=25oC		208		ns
tr	Rise Time			65		ns
td(off)	Turn-Off Delay Time			505		ns
tf	Fall Time			104		ns
Eon	Turn-On Switching Loss			77.7		mJ
Eoff	Turn-Off Switching Loss			62.2		mJ
td(on)	Turn-On Delay Time	VCC=800V,IC=600A, RGon=3.0Ω,RGoff=1.0Ω, LS=24nH, VGE=-8V/+15V, Tvj=150oC		225		ns
tr	Rise Time			75		ns
td(off)	Turn-Off Delay Time			567		ns
tf	Fall Time			191		ns
Eon	Turn-On Switching Loss			110		mJ
Eoff	Turn-Off Switching Loss			83.4		mJ
td(on)	Turn-On Delay Time	VCC=800V,IC=600A, RGon=3.0Ω,RGoff=1.0Ω, LS=24nH, VGE=-8V/+15V, Tvj=175oC		226		ns
tr	Rise Time			77		ns
td(off)	Turn-Off Delay Time			583		ns
tf	Fall Time			203		ns
Eon	Turn-On Switching Loss			118		mJ
Eoff	Turn-Off Switching Loss			85.9		mJ
ISC	SC Data	tP≤4μs,VGE=15V, Tvj=175oC,VCC=800V, VCEM≤1200V		2600		A

Diode Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=600A,VGE=0V,Tvj=25oC		1.95		V
		IF=600A,VGE=0V,Tvj=150oC		1.95
		IF=600A,VGE=0V,Tvj=175oC		1.90
		IF=720A,VGE=0V,Tvj=25oC		2.05
		IF=720A,VGE=0V,Tvj=175oC		2.05
Qr	Recovered Charge	VR=800V,IF=600A, -di/dt=8281A/μs, LS=24nH, VGE=-8V,Tvj=25oC		44.3		μC
IRM	Peak Reverse Recovery Current			346		A
Erec	Reverse Recovery Energy			16.2		mJ
Qr	Recovered Charge	VR=800V,IF=600A, -di/dt=6954A/μs, LS=24nH, VGE=-8V,Tvj=150oC		73.4		μC
IRM	Peak Reverse Recovery Current			385		A
Erec	Reverse Recovery Energy			27.8		mJ
Qr	Recovered Charge	VR=800V,IF=600A, -di/dt=6679A/μs, LS=24nH, VGE=-8V,Tvj=175oC		80.7		μC
IRM	Peak Reverse Recovery Current			392		A
Erec	Reverse Recovery Energy			30.7		mJ

NTC Characteristics TF=25oC unless otherwise noted

Module Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		8		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.75		mΩ
p	Maximum Pressure In Cooling Circuit Tbaseplate<40oC Tbaseplate >40oC (relative pressure)			2.5 2.0	bar
RthJF	Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC		0.072 0.104	0.083 0.120	K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4	3.6 1.8		4.4 2.2	N.m
G	Weight of Module		750		g