Brief introduction
IGBT module, produced by STARPOWER. 1700V 650A
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise note
IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC= 100oC | 1073 650 | A |
ICM | Pulsed Collector Current tp=1ms | 1300 | A |
PD | Maximum Power Dissipation @ Tj=175oC | 4.2 | kW |
Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1700 | V |
IF | Diode Continuous Forward Current | 650 | A |
IFM | Diode Maximum Forward Current tp=1ms | 1300 | A |
Module
Symbol | Description | Value | Unit |
Tjmax | Maximum Junction Temperature | 175 | oC |
Tjop | Operating Junction Temperature | -40 to +150 | oC |
TSTG | Storage Temperature Range | -40 to +150 | oC |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=650A,VGE=15V, Tj=25oC |
| 1.90 | 2.35 |
V |
IC=650A,VGE=15V, Tj=125oC |
| 2.35 |
| |||
IC=650A,VGE=15V, Tj=150oC |
| 2.45 |
| |||
VGE(th) | Gate-Emitter Threshold Voltage | IC=24.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25oC |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC |
|
| 400 | nA |
RGint | Internal Gate Resistance |
|
| 2.3 |
| Ω |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 72.3 |
| nF |
Cres | Reverse Transfer Capacitance |
| 1.75 |
| nF | |
QG | Gate Charge | VGE=- 15…+15V |
| 5.66 |
| μC |
td(on) | Turn-On Delay Time |
VCC=900V,IC=650A, RGon= 1.8Ω,RGoff=2.7Ω, VGE=±15V,Tj=25oC |
| 468 |
| ns |
tr | Rise Time |
| 86 |
| ns | |
td(off) | Turn-Off Delay Time |
| 850 |
| ns | |
tf | Fall Time |
| 363 |
| ns | |
Eon | Turn-On Switching Loss |
| 226 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 161 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=650A, RGon= 1.8Ω,RGoff=2.7Ω, VGE=±15V,Tj= 125oC |
| 480 |
| ns |
tr | Rise Time |
| 110 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1031 |
| ns | |
tf | Fall Time |
| 600 |
| ns | |
Eon | Turn-On Switching Loss |
| 338 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 226 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=650A, RGon= 1.8Ω,RGoff=2.7Ω, VGE=±15V,Tj= 150oC |
| 480 |
| ns |
tr | Rise Time |
| 120 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1040 |
| ns | |
tf | Fall Time |
| 684 |
| ns | |
Eon | Turn-On Switching Loss |
| 368 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 242 |
| mJ | |
ISC |
SC Data | tP≤10μs,VGE=15V, Tj=150oC,VCC= 1000V, VCEM≤1700V |
|
2600 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VF | Diode Forward Voltage | IF=650A,VGE=0V,Tj=25oC |
| 1.85 | 2.30 |
V |
IF=650A,VGE=0V,Tj= 125oC |
| 1.98 |
| |||
IF=650A,VGE=0V,Tj= 150oC |
| 2.02 |
| |||
Qr | Recovered Charge | VR=900V,IF=650A, -di/dt=5980A/μs,VGE=- 15V Tj=25oC |
| 176 |
| μC |
IRM | Peak Reverse Recovery Current |
| 765 |
| A | |
Erec | Reverse Recovery Energy |
| 87.4 |
| mJ | |
Qr | Recovered Charge | VR=900V,IF=650A, -di/dt=5980A/μs,VGE=- 15V Tj= 125oC |
| 292 |
| μC |
IRM | Peak Reverse Recovery Current |
| 798 |
| A | |
Erec | Reverse Recovery Energy |
| 159 |
| mJ | |
Qr | Recovered Charge | VR=900V,IF=650A, -di/dt=5980A/μs,VGE=- 15V Tj= 150oC |
| 341 |
| μC |
IRM | Peak Reverse Recovery Current |
| 805 |
| A | |
Erec | Reverse Recovery Energy |
| 192 |
| mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
R25 | Rated Resistance |
|
| 5.0 |
| kΩ |
ΔR/R | Deviation of R100 | TC= 100 oC,R100=493.3Ω | -5 |
| 5 | % |
P25 | Power Dissipation |
|
|
| 20.0 | mW |
B25/50 | B-value | R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
| 3375 |
| K |
B25/80 | B-value | R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
| 3411 |
| K |
B25/100 | B-value | R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
| 3433 |
| K |
Module Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Min. | Typ. | Max. | Unit |
LCE | Stray Inductance |
| 18 |
| nH |
RCC’+EE’ | Module Lead Resistance, Terminal to Chip |
| 0.30 |
| mΩ |
RthJC | Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
| 35.8 71.3 | K/kW |
RthCH | Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
| 13.5 26.9 4.5 |
| K/kW |
M | Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M5 | 1.8 8.0 3.0 |
| 2.1 10.0 6.0 |
N.m |
G | Weight of Module |
| 810 |
| g |
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