1200V 720A Package:C2.1
Brief introduction
IGBT module,produced by STARPOWER. 1200V 600A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=70oC |
857 600 |
A |
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
PD |
Maximum Power Dissipation @ Tvj=150oC |
4310 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
150 |
oC |
Tvjop |
Operating Junction Temperature |
-40 to +125 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=600A,VGE=15V, Tvj=25oC |
|
3.00 |
3.45 |
V |
IC=600A,VGE=15V, Tvj=125oC |
|
3.80 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=12mA,VCE=VGE, Tvj=25oC |
4.8 |
5.8 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.31 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
43.6 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
2.72 |
|
nF |
|
QG |
Gate Charge |
VGE=-15V…+15V |
|
8.32 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.5Ω, VGE=±15V, Ls=50nH,Tvj=25oC |
|
317 |
|
ns |
tr |
Rise Time |
|
76 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
548 |
|
ns |
|
tf |
Fall Time |
|
55 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
20.2 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
34.2 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=1.5Ω, VGE=±15V, Ls=50nH,Tvj=125oC |
|
325 |
|
ns |
tr |
Rise Time |
|
79 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
595 |
|
ns |
|
tf |
Fall Time |
|
59 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
27.2 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
38.4 |
|
mJ |
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tvj=125oC,VCC=800V, VCEM≤1200V |
|
3000 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward Voltage |
IF=600A,VGE=0V,Tvj=25oC |
|
1.85 |
2.30 |
V |
IF=600A,VGE=0V,Tvj=125oC |
|
1.90 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=600A, -di/dt=7745A/μs,VGE=-15V, Ls=50nH,Tvj=25oC |
|
58.0 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
489 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
28.1 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=600A, -di/dt=7355A/μs,VGE=-15V, Ls=50nH,Tvj=25oC |
|
100 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
563 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
48.2 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
20 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.35 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
0.029 0.069 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.014 0.034 0.010 |
|
K/W |
M |
Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
300 |
|
g |
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