GD600HFX120C2SAD_B20 ,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 600A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage Transient Gate-Emitter Voltage	±20 ±30	V
IC	Collector Current @ TC=25oC @ TC=100oC	1096 600	A
ICM	Pulsed Collector Current tp=1ms	1200	A
PD	Maximum Power Dissipation @ Tvj=175oC	3947	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	600	A
IFM	Diode Maximum Forward Current tp=1ms	1200	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=600A,VGE=15V, Tvj=25oC		1.70	2.15	V
		IC=600A,VGE=15V, Tvj=125oC		2.05
		IC=600A,VGE=15V, Tvj=150oC		2.15
VGE(th)	Gate-Emitter Threshold Voltage	IC=24.0mA,VCE=VGE, Tvj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.25		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		64.7		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=100kHz, VGE=0V		1.88		nF
QG	Gate Charge	VGE=-15…+15V		5.38		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=600A, RG=1.5Ω,LS=50nH, VGE=±15V,Tvj=25oC		314		ns
tr	Rise Time			105		ns
td(off)	Turn-Off Delay Time			527		ns
tf	Fall Time			151		ns
Eon	Turn-On Switching Loss			63.7		mJ
Eoff	Turn-Off Switching Loss			53.3		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=600A, RG=1.5Ω,LS=50nH, VGE=±15V,Tvj=125oC		350		ns
tr	Rise Time			117		ns
td(off)	Turn-Off Delay Time			591		ns
tf	Fall Time			315		ns
Eon	Turn-On Switching Loss			96.5		mJ
Eoff	Turn-Off Switching Loss			72.2		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=600A, RG=1.5Ω,LS=50nH, VGE=±15V,Tvj=150oC		359		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time			604		ns
tf	Fall Time			328		ns
Eon	Turn-On Switching Loss			105		mJ
Eoff	Turn-Off Switching Loss			75.6		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=150oC,VCC=800V, VCEM≤1200V		2400		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=600A,VGE=0V,Tvj=25oC		1.65	2.10	V
		IF=600A,VGE=0V,Tvj=125oC		1.65
		IF=600A,VGE=0V,Tvj=150oC		1.60
Qr	Recovered Charge	VR=600V,IF=600A, -di/dt=5130A/μs, LS=50nH, VGE=-15V,Tvj=25oC		38.6		μC
IRM	Peak Reverse Recovery Current			313		A
Erec	Reverse Recovery Energy			10.8		mJ
Qr	Recovered Charge	VR=600V,IF=600A, -di/dt=4440A/μs, LS=50nH, VGE=-15V,Tvj=125oC		76.1		μC
IRM	Peak Reverse Recovery Current			368		A
Erec	Reverse Recovery Energy			22.5		mJ
Qr	Recovered Charge	VR=600V,IF=600A, -di/dt=4240A/μs, LS=50nH, VGE=-15V,Tvj=150oC		88.9		μC
IRM	Peak Reverse Recovery Current			387		A
Erec	Reverse Recovery Energy			26.2		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		20		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.42		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.038 0.068	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.031 0.056 0.010		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		320		g