GD600HFX120C2SA ,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 600A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage Transient Gate-Emitter Voltage	±20 ±30	V
IC	Collector Current @ TC=25oC @ TC=100oC	925 600	A
ICM	Pulsed Collector Current tp=1ms	1200	A
PD	Maximum Power Dissipation @ Tj=175oC	3000	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	600	A
IFM	Diode Maximum Forward Current tp=1ms	1200	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=600A,VGE=15V, Tj=25oC		1.65	2.00	V
		IC=600A,VGE=15V, Tj=125oC		1.95
		IC=600A,VGE=15V, Tj=150oC		2.00
VGE(th)	Gate-Emitter Threshold Voltage	IC=24.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.25		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		60.8		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=100kHz, VGE=0V		1.84		nF
QG	Gate Charge	VGE=-15…+15V		4.64		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=600A, RG=1.2Ω,LS=34nH, VGE=±15V,Tj=25oC		339		ns
tr	Rise Time			95		ns
td(off)	Turn-Off Delay Time			468		ns
tf	Fall Time			168		ns
Eon	Turn-On Switching Loss			63.7		mJ
Eoff	Turn-Off Switching Loss			56.4		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=600A, RG=1.2Ω,LS=34nH, VGE=±15V,Tj=125oC		418		ns
tr	Rise Time			135		ns
td(off)	Turn-Off Delay Time			567		ns
tf	Fall Time			269		ns
Eon	Turn-On Switching Loss			108		mJ
Eoff	Turn-Off Switching Loss			72.3		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=600A, RG=1.2Ω,LS=34nH, VGE=±15V,Tj=150oC		446		ns
tr	Rise Time			151		ns
td(off)	Turn-Off Delay Time			602		ns
tf	Fall Time			281		ns
Eon	Turn-On Switching Loss			123		mJ
Eoff	Turn-Off Switching Loss			78.2		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V		2400		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=600A,VGE=0V,Tj=25oC		1.85	2.30	V
		IF=600A,VGE=0V,Tj=125oC		1.90
		IF=600A,VGE=0V,Tj=150oC		1.95
Qr	Recovered Charge	VCC=600V,IF=600A, -di/dt=5210A/μs,VGE=-15V, LS=34nH,Tj=25oC		49.3		μC
IRM	Peak Reverse Recovery Current			300		A
Erec	Reverse Recovery Energy			24.1		mJ
Qr	Recovered Charge	VCC=600V,IF=600A, -di/dt=3490A/μs,VGE=-15V, LS=34nH,Tj=125oC		85.2		μC
IRM	Peak Reverse Recovery Current			314		A
Erec	Reverse Recovery Energy			33.8		mJ
Qr	Recovered Charge	VCC=600V,IF=600A, -di/dt=3080A/μs,VGE=-15V, LS=34nH,Tj=150oC		102		μC
IRM	Peak Reverse Recovery Current			318		A
Erec	Reverse Recovery Energy			36.8		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			20	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.35		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.050 0.080	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.033 0.052 0.010		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		300		g