GD450HFX120N6HY ,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 450A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
ICN	Implemented Collector Current	450	A
IC	Collector Current @ TF=100oC	300	A
ICRM	Repetitive Peak Collector Current tp limited by Tvjop	900	A
PD	Maximum Power Dissipation @ TF=65oC Tvj=175oC	1208	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IFN	Implemented Collector Current	450	A
IF	Diode Continuous Forward Current	300	A
IFRM	Repetitive Peak Forward Current tp limited by Tvjop	900	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature continuous	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V
dCreep	Terminal to Heatsink Terminal to Terminal	7.3 7.3	mm
dClear	Terminal to Heatsink Terminal to Terminal	7.3 4.0	mm

IGBT Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=300A,VGE=15V, Tvj=25oC		1.25	1.70	V
		IC=300A,VGE=15V, Tvj=150oC		1.35
		IC=300A,VGE=15V, Tvj=175oC		1.40
		IC=450A,VGE=15V, Tvj=25oC		1.40
		IC=450A,VGE=15V, Tvj=150oC		1.65
		IC=450A,VGE=15V, Tvj=175oC		1.70
VGE(th)	Gate-Emitter Threshold Voltage	IC=15.6mA,VCE=VGE, Tvj=25oC	5.8	6.4	7.0	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.67		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		81.2		nF
Coes	Output Capacitance			1.56		nF
Cres	Reverse Transfer Capacitance			0.53		nF
QG	Gate Charge	VCE =600V,IC =450A, VGE=-8…+15V		5.31		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=450A, RG=1.5Ω,LS=20nH, VGE=-8V/+15V, Tvj=25oC		361		ns
tr	Rise Time			63		ns
td(off)	Turn-Off Delay Time			729		ns
tf	Fall Time			150		ns
Eon	Turn-On Switching Loss			57.8		mJ
Eoff	Turn-Off Switching Loss			34.7		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=450A, RG=1.5Ω,LS=20nH, VGE=-8V/+15V, Tvj=150oC		406		ns
tr	Rise Time			81		ns
td(off)	Turn-Off Delay Time			825		ns
tf	Fall Time			235		ns
Eon	Turn-On Switching Loss			80.6		mJ
Eoff	Turn-Off Switching Loss			45.9		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=450A, RG=1.5Ω,LS=20nH, VGE=-8V/+15V, Tvj=175oC		420		ns
tr	Rise Time			84		ns
td(off)	Turn-Off Delay Time			844		ns
tf	Fall Time			241		ns
Eon	Turn-On Switching Loss			88.9		mJ
Eoff	Turn-Off Switching Loss			47.5		mJ
ISC	SC Data	tP≤6μs,VG E=15V,		1800		A
		Tvj=175oC,VCC=800V, VCEM≤1200V

Diode Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=300A,VGE=0V,Tvj=25oC		1.60		V
		IF=300A,VGE=0V,Tvj=150oC		1.50
		IF=300A,VGE=0V,Tvj=175oC		1.45
		IF=450A,VGE=0V,Tvj=25oC		1.80
		IF=450A,VGE=0V,Tvj=150oC		1.75
		IF=450A,VGE=0V,Tvj=175oC		1.70
Qr	Recovered Charge	VR=600V,IF=450A, -di/dt=7460A/μs,VGE=-8V, LS=20nH,Tvj=25oC		19.3		μC
IRM	Peak Reverse Recovery Current			294		A
Erec	Reverse Recovery Energy			8.32		mJ
Qr	Recovered Charge	VR=600V,IF=450A, -di/dt=5610A/μs,VGE=-8V, LS=20nH,Tvj=150oC		49.9		μC
IRM	Peak Reverse Recovery Current			308		A
Erec	Reverse Recovery Energy			14.1		mJ
Qr	Recovered Charge	VR=600V,IF=450A, -di/dt=5250A/μs,VGE=-8V, LS=20nH,Tvj=175oC		56.0		μC
IRM	Peak Reverse Recovery Current			311		A
Erec	Reverse Recovery Energy			15.6		mJ

PTC Characteristics TF=25oC unless otherwise noted

Module Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		5		nH
p	Maximum Pressure In Cooling Circuit			2.5	bar
RthJF	Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=2.67 L/min,TF=65oC		0.083 0.105	0.095 0.121	K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5	3.6 5.4		4.4 6.6	N.m
G	Weight of Module		220		g