GD400HTX120P6HT,IGBT Module,STARPOWER

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

ICN

Implemented Collector Current

400

A

IC

Collector Current @ TF=125oC

250

A

ICM

Pulsed Collector Current tp=1ms

800

A

PD

Maximum Power Dissipation @ TF=75oC Tj=175oC

1075

W

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IFN

Implemented Collector Current

400

A

IF

Diode Continuous Forward Current

250

A

IFM

Diode Maximum Forward Current tp=1ms

800

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature continuous

For 10s within a period of 30s,occurrence maximum 3000 times over lifetime

-40 to +150 +150 to +175

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

dCreep

Terminal to Heatsink Terminal to Terminal

9.0 9.0

mm

dClear

Terminal to Heatsink Terminal to Terminal

4.5 4.5

mm

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=250A,VGE=15V, Tj=25oC

1.45

1.80

V

IC=250A,VGE=15V, Tj=125oC

1.65

IC=250A,VGE=15V, Tj=150oC

1.70

IC=380A,VGE=15V, Tj=25oC

1.70

IC=380A,VGE=15V, Tj=150oC

2.15

VGE(th)

Gate-Emitter Threshold Voltage

IC=9.75mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

2.4

Ω

Cies

Input Capacitance

VCE=25V,f=100kHz, VGE=0V

33.6

nF

Coes

Output Capacitance

1.43

nF

Cres

Reverse Transfer Capacitance

0.82

nF

QG

Gate Charge

VCE =600V,IC =250A, VGE=-8…+15V

1.98

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V,

Tj=25oC

231

ns

tr

Rise Time

50

ns

td(off)

Turn-Off Delay Time

545

ns

tf

Fall Time

172

ns

Eon

Turn-On Switching Loss

19.6

mJ

Eoff

Turn-Off Switching Loss

23.2

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V,

Tj=125oC

241

ns

tr

Rise Time

57

ns

td(off)

Turn-Off Delay Time

619

ns

tf

Fall Time

247

ns

Eon

Turn-On Switching Loss

26.6

mJ

Eoff

Turn-Off Switching Loss

28.7

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=250A, RG=2.2Ω,LS=24nH, VGE=-8V/+15V,

Tj=150oC

245

ns

tr

Rise Time

57

ns

td(off)

Turn-Off Delay Time

641

ns

tf

Fall Time

269

ns

Eon

Turn-On Switching Loss

30.1

mJ

Eoff

Turn-Off Switching Loss

30.9

mJ

ISC

SC Data

tP≤6μs,VGE=15V,

Tj=150oC,VCC=800V, VCEM≤1200V

1200

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=250A,VGE=0V,Tj=25oC

1.50

1.90

V

IF=250A,VGE=0V,Tj=125oC

1.45

IF=250A,VGE=0V,Tj=150oC

1.40

IF=380A,VGE=0V,Tj=25oC

1.65

IF=380A,VGE=0V,Tj=150oC

1.60

Qr

Recovered Charge

VR=600V,IF=250A,

-di/dt=4860A/μs,VGE=-8V LS=24nH,Tj=25oC

9.10

μC

IRM

Peak Reverse

Recovery Current

160

A

Erec

Reverse Recovery Energy

4.39

mJ

Qr

Recovered Charge

VR=600V,IF=250A,

-di/dt=4300A/μs,VGE=-8V LS=24nH,Tj=125oC

21.4

μC

IRM

Peak Reverse

Recovery Current

192

A

Erec

Reverse Recovery Energy

8.43

mJ

Qr

Recovered Charge

VR=600V,IF=250A,

-di/dt=4120A/μs,VGE=-8V LS=24nH,Tj=150oC

25.7

μC

IRM

Peak Reverse

Recovery Current

203

A

Erec

Reverse Recovery Energy

9.97

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

8

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.75

mΩ

△p

△V/△t=10.0dm3/min,TF=75oC

64

mbar

p

Maximum Pressure In Cooling Circuit

2.5

bar

RthJF

Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC

0.081 0.118

0.093 0.136

K/W

M

Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4

3.6 1.8

4.4 2.2

N.m

G

Weight of Module

750

g