GD400HTX120P4SD,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 400A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
ICN	Implemented Collector Current	400	A
IC	Collector Current @ TF=25oC @ TF=75oC	400 300	A
ICM	Pulsed Collector Current tp=1ms	800	A
PD	Maximum Power Dissipation @ Tj=175oC	1500	W

IGBT

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IFN	Implemented Forward Current	400	A
IF	Diode Continuous Forward Current	300	A
IFM	Diode Maximum Forward Current tp=1ms	800	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=300A,VGE=15V, Tj=25oC		1.50	1.95	V
		IC=300A,VGE=15V, Tj=125oC		1.60
		IC=300A,VGE=15V, Tj=150oC		1.65
VGE(th)	Gate-Emitter Threshold Voltage	IC=16.0mA,VCE=VGE, Tj=25oC	5.3	5.8	6.3	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			0.5		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		41.4		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		1.16		nF
QG	Gate Charge	VGE=15V		3.11		μC
td(on)	Turn-On Delay Time	VCC=500V,IC=300A, RG=1.5Ω,VGE=±15V, Ls=25nH,Tj=25oC		223		ns
tr	Rise Time			32		ns
td(off)	Turn-Off Delay Time			354		ns
tf	Fall Time			228		ns
Eon	Turn-On Switching Loss			6.24		mJ
Eoff	Turn-Off Switching Loss			20.1		mJ
td(on)	Turn-On Delay Time	VCC=500V,IC=300A, RG=1.5Ω,VGE=±15V, Ls=25nH,Tj=125oC		229		ns
tr	Rise Time			36		ns
td(off)	Turn-Off Delay Time			411		ns
tf	Fall Time			344		ns
Eon	Turn-On Switching Loss			11.0		mJ
Eoff	Turn-Off Switching Loss			28.6		mJ
td(on)	Turn-On Delay Time	VCC=500V,IC=300A, RG=1.5Ω,VGE=±15V, Ls=25nH,Tj=150oC		231		ns
tr	Rise Time			38		ns
td(off)	Turn-Off Delay Time			421		ns
tf	Fall Time			352		ns
Eon	Turn-On Switching Loss			12.2		mJ
Eoff	Turn-Off Switching Loss			29.7		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V		1600		A

Diode Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=300A,VGE=0V,Tj=25oC		1.35	1.80	V
		IF=300A,VGE=0V,Tj=125oC		1.35
		IF=300A,VGE=0V,Tj=150oC		1.35
Qr	Recovered Charge	VR=500V,IF=300A, -di/dt=9700A/μs,VGE=-15V Ls=25nH,Tj=25oC		32.7		μC
IRM	Peak Reverse Recovery Current			478		A
Erec	Reverse Recovery Energy			22.1		mJ
Qr	Recovered Charge	VR=500V,IF=300A, -di/dt=8510A/μs,VGE=-15V Ls=25nH,Tj=125oC		45.9		μC
IRM	Peak Reverse Recovery Current			522		A
Erec	Reverse Recovery Energy			32.7		mJ
Qr	Recovered Charge	VR=500V,IF=300A, -di/dt=8250A/μs,VGE=-15V Ls=25nH,Tj=150oC		51.5		μC
IRM	Peak Reverse Recovery Current			537		A
Erec	Reverse Recovery Energy			37.4		mJ

NTC Characteristics TF=25oC unless otherwise noted

Module Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
△p	Pressure Drop Cooling Circuit △V/△t=10.0dm3/min;TF=25oC;Cooling Fluid=50% Water/50% Ethylene Glycol		100		mbar
p	Maximum Pressure In Cooling Circuit			2.5	bar
LCE	Stray Inductance		14		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.80		mΩ
RthJF	Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode)			0.100 0.125	K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6	2.5 3.0		5.0 6.0	N.m
G	Weight of Module		1340		g