GD400CUX120C2S,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

636

400

A

ICM

Pulsed Collector Current tp=1ms

800

A

PD

Maximum Power Dissipation @ Tvj=175oC

2083

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

400

A

IFM

Diode Maximum Forward Current tp=1ms

800

A

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=400A,VGE=15V, Tvj=25oC

1.75

2.20

V

IC=400A,VGE=15V, Tvj=125oC

2.00

IC=400A,VGE=15V, Tvj=150oC

2.05

VGE(th)

Gate-Emitter Threshold Voltage

IC=14.4mA,VCE=VGE, Tvj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

0.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

37.3

nF

Cres

Reverse Transfer Capacitance

1.04

nF

QG

Gate Charge

VGE=-15 …+15V

2.80

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω, LS=50nH , VGE=±15V, Tvj=25oC

223

ns

tr

Rise Time

49

ns

td(off)

Turn-Off Delay Time

334

ns

tf

Fall Time

190

ns

Eon

Turn-On Switching Loss

17.9

mJ

Eoff

Turn-Off Switching Loss

28.7

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω, LS=50nH , VGE=±15V, Tvj=125oC

230

ns

tr

Rise Time

54

ns

td(off)

Turn-Off Delay Time

385

ns

tf

Fall Time

300

ns

Eon

Turn-On Switching Loss

29.4

mJ

Eoff

Turn-Off Switching Loss

41.2

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω, LS=50nH , VGE=±15V, Tvj=150oC

228

ns

tr

Rise Time

57

ns

td(off)

Turn-Off Delay Time

393

ns

tf

Fall Time

315

ns

Eon

Turn-On Switching Loss

32.3

mJ

Eoff

Turn-Off Switching Loss

42.9

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=150oC,VCC=800V, VCEM≤1200V

1600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=400A,VGE=0V,Tvj=25oC

1.85

2.30

V

IF=400A,VGE=0V,Tvj=125oC

1.90

IF=400A,VGE=0V,Tvj=150oC

1.95

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=8030A/μs, LS=50nH, VGE=-15V,Tvj=25oC

33.6

μC

IRM

Peak Reverse

Recovery Current

374

A

Erec

Reverse Recovery Energy

13.6

mJ

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=7030A/μs, LS=50nH, VGE=-15V,Tvj=125oC

67.5

μC

IRM

Peak Reverse

Recovery Current

446

A

Erec

Reverse Recovery Energy

28.2

mJ

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=6880A/μs, LS=50nH, VGE=-15V, Tvj=150oC

75.5

μC

IRM

Peak Reverse

Recovery Current

452

A

Erec

Reverse Recovery Energy

31.4

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.072 0.113

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.023 0.036 0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5 3.0

5.0 5.0

N.m

G

Weight of Module

300

g