GD400CLU120C2SD,IGBT Module,STARPOWER

IGBT Module，1200V 400A, Package:C2

Brand:

STARPOWER

Spu:

GD400CLU120C2SD

Brief introduction

IGBT module,produced by STARPOWER. 1200V 400A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=60oC	519 400	A
ICM	Pulsed Collector Current tp=1ms	800	A
PD	Maximum Power Dissipation @ Tvj=150oC	2450	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	400	A
IFM	Diode Maximum Forward Current tp=1ms	800	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	150	oC
Tvjop	Operating Junction Temperature	-40 to +125	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=400A,VGE=15V, Tvj=25oC		2.90	3.35	V
VCE(sat)	Collector to Emitter Saturation Voltage	IC=400A,VGE=15V, Tvj=125oC		3.60		V
VGE(th)	Gate-Emitter Threshold Voltage	IC=16.0mA,VCE=VGE, Tvj=25oC	4.5	5.5	6.5	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			0.6		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		26.0		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		1.70		nF
QG	Gate Charge	VGE=-15…+15V		4.2		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=400A, RG=2.2Ω,LS=30nH, VGE=±15V,Tvj=25oC		252		ns
tr	Rise Time			63		ns
td(off)	Turn-Off Delay Time			427		ns
tf	Fall Time			44		ns
Eon	Turn-On Switching Loss			24.7		mJ
Eoff	Turn-Off Switching Loss			16.5		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=400A, RG=2.2Ω,LS=30nH, VGE=±15V,Tvj=125oC		258		ns
tr	Rise Time			65		ns
td(off)	Turn-Off Delay Time			465		ns
tf	Fall Time			57		ns
Eon	Turn-On Switching Loss			35.2		mJ
Eoff	Turn-Off Switching Loss			22.6		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=125oC,VCC=800V, VCEM≤1200V		1600		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=400A,VGE=0V,Tvj=25oC		1.85	2.30	V
VF	Diode Forward Voltage	IF=400A,VGE=0V,Tvj=125oC		1.90		V
Qr	Recovered Charge	VR=600V,IF=400A, -di/dt=6540A/μs, LS=30nH, VGE=-15V,Tvj=25oC		38.9		μC
IRM	Peak Reverse Recovery Current			401		A
Erec	Reverse Recovery Energy			13.8		mJ
Qr	Recovered Charge	VR=600V,IF=400A, -di/dt=6300A/μs, LS=30nH, VGE=-15V,Tvj=125oC		68.0		μC
IRM	Peak Reverse Recovery Current			444		A
Erec	Reverse Recovery Energy			26.2		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			30	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.35		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.051 0.114	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.019 0.042 0.010		K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		300		g