1700V 3600A，C4
Brief introduction
IGBT module,produced by STARPOWER. 1700V 3600A,C4.
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=100oC |
3600 |
A |
ICM |
Pulsed Collector Current tp=1ms |
7200 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
21.4 |
kW |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
3600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
7200 |
A |
IFSM |
Surge Forward Current VR=0V,tp=10ms, @Tj=25oC @Tj=150oC |
23.22 19.95 |
kA |
I2t |
I2t-value,VR=0V,tp=10ms,Tj=25oC I2t-value,VR=0V,tp=10ms,Tj=150oC |
2695 1990 |
kA2s |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=3600A,VGE=15V, Tj=25oC |
|
1.85 |
2.30 |
V |
IC=3600A,VGE=15V, Tj=125oC |
|
2.25 |
|
|||
IC=3600A,VGE=15V, Tj=150oC |
|
2.30 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=144.0mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
5.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
0.7 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
427 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
10.7 |
|
nF |
|
QG |
Gate Charge |
VGE=-15…+15V |
|
35.3 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=900V,IC=3600A, RGon=1.2Ω,RGoff=0.9Ω, VGE=-9V/+15V, LS=65nH,Tj=25oC |
|
1161 |
|
ns |
tr |
Rise Time |
|
413 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
4761 |
|
ns |
|
tf |
Fall Time |
|
430 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
1734 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
2580 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=3600A, RGon=1.2Ω,RGoff=0.9Ω, VGE=-9V/+15V, LS=65nH,Tj=125oC |
|
1370 |
|
ns |
tr |
Rise Time |
|
547 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
5303 |
|
ns |
|
tf |
Fall Time |
|
457 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
2679 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
2881 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=900V,IC=3600A, RGon=1.2Ω,RGoff=0.9Ω, VGE=-9V/+15V, LS=65nH,Tj=150oC |
|
1413 |
|
ns |
tr |
Rise Time |
|
585 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
5490 |
|
ns |
|
tf |
Fall Time |
|
473 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
2863 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
2960 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V |
|
14.0 |
|
kA |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=3600A,VGE=0V,Tj=25oC |
|
1.80 |
2.25 |
V |
IF=3600A,VGE=0V,Tj=125oC |
|
1.90 |
|
|||
IF=3600A,VGE=0V,Tj=150oC |
|
1.95 |
|
|||
Qr |
Recovered Charge |
VR=900V,IF=3600A, -di/dt=7000A/μs,VGE=-9V, LS=65nH,Tj=25oC |
|
207 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
1030 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
199 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=3600A, -di/dt=5700/μs,VGE=-9V, LS=65nH,Tj=125oC |
|
288 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
1020 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
339 |
|
mJ |
|
Qr |
Recovered Charge |
VR=900V,IF=3600A, -di/dt=5200A/μs,VGE=-9V, LS=65nH,Tj=150oC |
|
391 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
996 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
341 |
|
mJ |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
6.0 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.085 |
|
mΩ |
RthJC |
Junction-to-Case (perIGBT) Junction-to-Case (per Diode) |
|
|
7.0 12.8 |
K/kW |
RthCH |
Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
6.2 11.3 4.0 |
|
K/kW |
dCreep |
Terminal-to-Heatsink Terminal-to-Terminal |
|
32.2 32.2 |
|
mm |
dClear |
Terminal-to-Heatsink Terminal-to-Terminal |
|
19.1 19.1 |
|
mm |
|
M |
Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 |
1.8 8.0 4.25 |
|
2.1 10 5.75 |
N.m |
G |
Weight of Module |
|
2060 |
|
g |
EN
