GD300MNX120C6SA,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 300A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT-inverter

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	468 300	A
ICRM	Repetitive Peak Collector Current tp limited by Tvjop	600	A
PD	Maximum Power Dissipation @ Tvj=175oC	1530	W

Diode-inverter

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	300	A
IFRM	Repetitive Peak Forward Current tp limited by Tvjop	600	A

Diode-3-level

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	300	A
IFRM	Repetitive Peak Forward Current tp limited by Tvjop	600	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=300A,VGE=15V, Tvj=25oC		1.70	2.15	V
		IC=300A,VGE=15V, Tvj=125oC		1.95
		IC=300A,VGE=15V, Tvj=150oC		2.00
VGE(th)	Gate-Emitter Threshold Voltage	IC=12.0mA,VCE=VGE, Tvj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			2.5		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		31.1		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.87		nF
QG	Gate Charge	VGE=-15 …+15V		2.33		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=300A, RG=2.4Ω,Ls=35nH, VGE=±15V,Tvj=25oC		215		ns
tr	Rise Time			53		ns
td(off)	Turn-Off Delay Time			334		ns
tf	Fall Time			205		ns
Eon	Turn-On Switching Loss			21.5		mJ
Eoff	Turn-Off Switching Loss			20.7		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=300A, RG=2.4Ω,Ls=35nH, VGE=±15V,Tvj=125oC		231		ns
tr	Rise Time			59		ns
td(off)	Turn-Off Delay Time			361		ns
tf	Fall Time			296		ns
Eon	Turn-On Switching Loss			30.1		mJ
Eoff	Turn-Off Switching Loss			28.1		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=300A, RG=2.4Ω,Ls=35nH, VGE=±15V,Tvj=150oC		240		ns
tr	Rise Time			62		ns
td(off)	Turn-Off Delay Time			376		ns
tf	Fall Time			311		ns
Eon	Turn-On Switching Loss			32.9		mJ
Eoff	Turn-Off Switching Loss			29.9		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=150oC,VCC=800V, VCEM≤1200V		1200		A

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=300A,VGE=0V,Tvj=25oC		1.85	2.30	V
		IF=300A,VGE=0V,Tvj=125oC		1.90
		IF=300A,VGE=0V,Tvj=150oC		1.95
Qr	Recovered Charge	VCC=600V,IF=300A, -di/dt=2937A/μs, Ls=70nH, VGE=-15V,Tvj=25oC		36.3		μC
IRM	Peak Reverse Recovery Current			235		A
Erec	Reverse Recovery Energy			15.7		mJ
Qr	Recovered Charge	VCC=600V,IF=300A, -di/dt=2720A/μs, Ls=70nH, VGE=-15V,Tvj=125oC		61.3		μC
IRM	Peak Reverse Recovery Current			257		A
Erec	Reverse Recovery Energy			27.5		mJ
Qr	Recovered Charge	VCC=600V,IF=300A, -di/dt=2616A/μs, Ls=70nH, VGE=-15V,Tvj=150oC		68.8		μC
IRM	Peak Reverse Recovery Current			262		A
Erec	Reverse Recovery Energy			30.8		mJ

Diode-3-level Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=300A,VGE=0V,Tvj=25oC		1.85	2.30	V
		IF=300A,VGE=0V,Tvj=125oC		1.90
		IF=300A,VGE=0V,Tvj=150oC		1.95
Qr	Recovered Charge	VCC=600V,IF=300A, -di/dt=5683A/μs,Ls=35nH, VGE=-15V,Tvj=25oC		36.2		μC
IRM	Peak Reverse Recovery Current			290		A
Erec	Reverse Recovery Energy			13.4		mJ
Qr	Recovered Charge	VCC=600V,IF=300A, -di/dt=4958A/μs,Ls=35nH, VGE=-15V,Tvj=125oC		56.6		μC
IRM	Peak Reverse Recovery Current			301		A
Erec	Reverse Recovery Energy			22.2		mJ
Qr	Recovered Charge	VCC=600V,IF=300A, -di/dt=4673A/μs,Ls=35nH, VGE=-15V,Tvj=150oC		65.9		μC
IRM	Peak Reverse Recovery Current			306		A
Erec	Reverse Recovery Energy			26.3		mJ

NTC Characteristics TC=25oC unless otherwise noted

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		35		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		1.45		mΩ
RthJC	Junction-to-Case (perIGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-3-level)			0.098 0.176 0.176	K/W
RthCH	Case-to-Sink (per IGBT-inverter) Case-to-Sink (per Diode-inverter) Case-to-Sink (per Diode-3-level) Case-to-Heatsink (per Module)		0.033 0.059 0.059 0.009		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5	3.0 3.0		6.0 6.0	N.m
G	Weight of Module		350		g