GD300FFA120C6S,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 300A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	320 300	A
ICM	Pulsed Collector Current tp=1ms	600	A
PD	Maximum Power Dissipation @ Tj=175oC	1063	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	300	A
IFM	Diode Maximum Forward Current tp=1ms	600	A

Module

Symbol	Description	Values	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=300A,VGE=15V, Tj=25oC		1.40	1.85	V
		IC=300A,VGE=15V, Tj=125oC		1.60
		IC=300A,VGE=15V, Tj=175oC		1.60
VGE(th)	Gate-Emitter Threshold Voltage	IC=8mA,VCE=VGE, Tj=25oC	5.5	6.3	7.0	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.5		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		51.5		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=100kHz, VGE=0V		0.36		nF
QG	Gate Charge	VGE=-15 …+15V		4.50		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=300A, RG=1.5Ω,Ls=32nH, VGE=±15V, Tj=25oC		405		ns
tr	Rise Time			83		ns
td(off)	Turn-Off Delay Time			586		ns
tf	Fall Time			129		ns
Eon	Turn-On Switching Loss			34.3		mJ
Eoff	Turn-Off Switching Loss			19.3		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=300A, RG=1.5Ω,Ls=32nH, VGE=±15V, Tj=125oC		461		ns
tr	Rise Time			107		ns
td(off)	Turn-Off Delay Time			676		ns
tf	Fall Time			214		ns
Eon	Turn-On Switching Loss			48.0		mJ
Eoff	Turn-Off Switching Loss			26.6		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=300A, RG=1.5Ω,Ls=32nH, VGE=±15V, Tj=175oC		518		ns
tr	Rise Time			124		ns
td(off)	Turn-Off Delay Time			738		ns
tf	Fall Time			264		ns
Eon	Turn-On Switching Loss			58.1		mJ
Eoff	Turn-Off Switching Loss			31.7		mJ
ISC	SC Data	tP≤7μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V		1150		A
ISC	SC Data	tP≤6μs,VGE=15V, Tj=175oC,VCC=800V, VCEM≤1200V		1110		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=300A,VGE=0V,Tj=25oC		1.60	2.00	V
		IF=300A,VGE=0V,Tj=125oC		1.60
		IF=300A,VGE=0V,Tj=175oC		1.50
Qr	Recovered Charge	VR=600V,IF=300A, -di/dt=3135A/μs,VGE=-15V, Ls=32nH,Tj=25oC		19.1		μC
IRM	Peak Reverse Recovery Current			140		A
Erec	Reverse Recovery Energy			4.92		mJ
Qr	Recovered Charge	VR=600V,IF=300A, -di/dt=2516A/μs,VGE=-15V Ls=32nH,Tj=125oC		33.7		μC
IRM	Peak Reverse Recovery Current			159		A
Erec	Reverse Recovery Energy			9.35		mJ
Qr	Recovered Charge	VR=600V,IF=300A, -di/dt=2204A/μs,VGE=-15V Ls=32nH,Tj=175oC		46.8		μC
IRM	Peak Reverse Recovery Current			171		A
Erec	Reverse Recovery Energy			13.7		mJ

NTC Characteristics TC=25oC unless otherwise noted

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		21		nH
RCC’+EE’	Module Lead Resistance,Terminal to Chip		1.80		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.141 0.243	K/W
RthCH	Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.085 0.147 0.009		K/W
M	Mounting Screw:M6	3.0		6.0	N.m
G	Weight of Module		300		g