IGBT Module,1200V 275A, Package:L6
Brief introduction
IGBT module,produced by STARPOWER. 1200V 275A.
Features
Typical Applications
Solar power
3-level-application
Absolute Maximum Ratings TF=25oC unless otherwise noted
T1-T4 IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
ICN |
Implemented Collector Current |
275 |
A |
IC |
Collector Current @ TC=100oC |
110 |
A |
ICM |
Pulsed Collector Current tp=1ms |
450 |
A |
D1/D4 Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IFN |
Implemented Forward Current |
275 |
A |
IF |
Diode Continuous Forward Current |
300 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
450 |
A |
D2/D3 Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IFN |
Implemented Forward Current |
275 |
A |
IF |
Diode Continuous Forward Current |
225 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
450 |
A |
D5/D6 Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IFN |
Implemented Forward Current |
275 |
A |
IF |
Diode Continuous Forward Current |
300 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
450 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
3200 |
V |
T1-T4 IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=225A,VGE=15V, Tj=25oC |
|
2.00 |
2.45 |
V |
IC=225A,VGE=15V, Tj=125oC |
|
2.70 |
|
|||
IC=225A,VGE=15V, Tj=150oC |
|
2.90 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=9.00mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
1.7 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=100kHz, VGE=0V |
|
38.1 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.66 |
|
nF |
|
QG |
Gate Charge |
VGE=-15…+15V |
|
2.52 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=225A, RG=2Ω,VGE=-8/+15V, LS=36nH ,Tj=25oC |
|
154 |
|
ns |
tr |
Rise Time |
|
45 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
340 |
|
ns |
|
tf |
Fall Time |
|
76 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
13.4 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
8.08 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=225A, RG=2Ω,VGE=-8/+15V, LS=36nH ,Tj=125oC |
|
160 |
|
ns |
tr |
Rise Time |
|
49 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
388 |
|
ns |
|
tf |
Fall Time |
|
112 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
17.6 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
11.2 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=225A, RG=2Ω,VGE=-8/+15V, LS=36nH ,Tj=150oC |
|
163 |
|
ns |
tr |
Rise Time |
|
51 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
397 |
|
ns |
|
tf |
Fall Time |
|
114 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
18.7 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
12.0 |
|
mJ |
D1/D4 Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=300A,VGE=0V,Tj=25oC |
|
1.60 |
2.05 |
V |
IF=300A,VGE=0V,Tj=125oC |
|
1.60 |
|
|||
IF=300A,VGE=0V,Tj=150oC |
|
1.60 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=225A, -di/dt=5350A/μs,VGE=-8V LS=36nH,Tj=25oC |
|
20.1 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
250 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
6.84 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=225A, -di/dt=5080A/μs,VGE=-8V LS=36nH,Tj=125oC |
|
32.5 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
277 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
11.5 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=225A, -di/dt=4930A/μs,VGE=-8V LS=36nH,Tj=150oC |
|
39.0 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
288 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
14.0 |
|
mJ |
D2/D3 Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=225A,VGE=0V,Tj=25oC |
|
1.60 |
2.05 |
V |
IF=225A,VGE=0V,Tj=125oC |
|
1.60 |
|
|||
IF=225A,VGE=0V,Tj=150oC |
|
1.60 |
|
D5/D6 Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=300A,VGE=0V,Tj=25oC |
|
1.60 |
2.05 |
V |
IF=300A,VGE=0V,Tj=125oC |
|
1.60 |
|
|||
IF=300A,VGE=0V,Tj=150oC |
|
1.60 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=225A, -di/dt=5050A/μs,VGE=-8V LS=30nH,Tj=25oC |
|
18.6 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
189 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
5.62 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=225A, -di/dt=4720A/μs,VGE=-8V LS=30nH,Tj=125oC |
|
34.1 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
250 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
11.4 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=225A, -di/dt=4720A/μs,VGE=-8V LS=30nH,Tj=150oC |
|
38.9 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
265 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
13.2 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
15 |
|
nH |
|
RthJC |
Junction-to-Case (per T1-T4 IGBT) Junction-to-Case (per D1/D4 Diode) Junction-to-Case (per D2/D3 Diode) Junction-to-Case (per D5/D6 Diode) |
|
|
0.070 0.122 0.156 0.122 |
K/W |
|
RthCH |
Case-to-Heatsink (per T1-T4 IGBT) Case-to-Heatsink (per D1/D4 Diode) Case-to-Heatsink (per D2/D3 Diode) Case-to-Heatsink (per D5/D6 Diode) |
|
0.043 0.053 0.069 0.053 |
|
K/W |
M |
Mounting Torque, Screw:M5 |
3.0 |
|
5.0 |
N.m |
G |
Weight of Module |
|
250 |
|
g |
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