GD260HTX120P7H,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 260A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
ICN	Implemented Collector Current	260	A
IC	Collector Current @ TF=100oC	150	A
ICM	Pulsed Collector Current tp=1ms	520	A
PD	Maximum Power Dissipation @ TF=75oC Tj=175oC	500	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IFN	Implemented Collector Current	260	A
IF	Diode Continuous Forward Current	150	A
IFM	Diode Maximum Forward Current tp=1ms	520	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature continuous For 10s within a period of 30s,occurrence maximum 3000 times over lifetime	-40 to +150 +150 to +175	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=150A,VGE=15V, Tj=25oC		1.40	1.75	V
		IC=150A,VGE=15V, Tj=125oC		1.60
		IC=150A,VGE=15V, Tj=150oC		1.60
		IC=260A,VGE=15V, Tj=25oC		1.70
		IC=260A,VGE=15V, Tj=150oC		2.15
VGE(th)	Gate-Emitter Threshold Voltage	IC=10.4mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			3.6		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		22.4		nF
Coes	Output Capacitance			0.95		nF
Cres	Reverse Transfer Capacitance			0.55		nF
QG	Gate Charge	VCE =600V,IC =150A, VGE=-8…+15V		1.32		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=150A, RG=3.3Ω, VGE=-8V/+15V, LS=35nH,Tj=25oC		181		ns
tr	Rise Time			44		ns
td(off)	Turn-Off Delay Time			541		ns
tf	Fall Time			217		ns
Eon	Turn-On Switching Loss			12.1		mJ
Eoff	Turn-Off Switching Loss			14.4		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=150A, RG=3.3Ω, VGE=-8V/+15V, LS=35nH,Tj=125oC		193		ns
tr	Rise Time			52		ns
td(off)	Turn-Off Delay Time			609		ns
tf	Fall Time			319		ns
Eon	Turn-On Switching Loss			17.3		mJ
Eoff	Turn-Off Switching Loss			18.3		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=150A, RG=3.3Ω, VGE=-8V/+15V, LS=35nH,Tj=150oC		199		ns
tr	Rise Time			54		ns
td(off)	Turn-Off Delay Time			628		ns
tf	Fall Time			333		ns
Eon	Turn-On Switching Loss			19.3		mJ
Eoff	Turn-Off Switching Loss			19.3		mJ
ISC	SC Data	tP≤6μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V		800		A

Diode Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=150A,VGE=0V,Tj=25oC		1.45	1.80	V
		IF=150A,VGE=0V,Tj=125oC		1.40
		IF=150A,VGE=0V,Tj=150oC		1.35
		IF=260A,VGE=0V,Tj=25oC		1.65
		IF=260A,VGE=0V,Tj=150oC		1.65
Qr	Recovered Charge	VR=600V,IF=150A, -di/dt=3400A/μs,VGE=-8V LS=35nH,Tj=25oC		6.55		μC
IRM	Peak Reverse Recovery Current			115		A
Erec	Reverse Recovery Energy			3.23		mJ
Qr	Recovered Charge	VR=600V,IF=150A, -di/dt=2950A/μs,VGE=-8V LS=35nH,Tj=125oC		14.3		μC
IRM	Peak Reverse Recovery Current			125		A
Erec	Reverse Recovery Energy			5.42		mJ
Qr	Recovered Charge	VR=600V,IF=150A, -di/dt=2780A/μs,VGE=-8V LS=35nH,Tj=150oC		16.6		μC
IRM	Peak Reverse Recovery Current			130		A
Erec	Reverse Recovery Energy			6.31		mJ

NTC Characteristics TF=25oC unless otherwise noted

Module Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
△p	Pressure Drop Cooling Circuit ΔV/Δt=10.0dm3/min;TF=25 oC;Cooling Fluid=50% Water/50% Ethylene Glycol		50		mbar
p	Maximum Pressure In Cooling Circuit			2.0	bar
RthJF	Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode)			0.200 0.274	K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5	3.0 3.0		6.0 6.0	N.m
G	Weight of Module		685		g