GD2400SGX170C4S,IGBT Module,High current igbt module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1700V 2400A,C4.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=100oC	2400	A
ICM	Pulsed Collector Current tp=1ms	4800	A
PD	Maximum Power Dissipation @ Tj=175oC	13.7	kW

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	2400	A
IFM	Diode Maximum Forward Current tp=1ms	4800	A
IFSM	Surge Forward Current VR=0V,tp=10ms, @Tj=25oC @Tj=150oC	18.65 15.25	kA
I2t	I2t-value,VR=0V,tp=10ms,Tj=25oC I2t-value,VR=0V,tp=10ms,Tj=150oC	1739 1162	kA2s

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=2400A,VGE=15V, Tj=25oC		1.85	2.30	V
		IC=2400A,VGE=15V, Tj=125oC		2.25
		IC=2400A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=96.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			0.6		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		285		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=100kHz, VGE=0V		7.13		nF
QG	Gate Charge	VGE=-15…+15V		23.5		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=2400A, RG=0.82Ω,LS=32nH, VGE=-9V/+15V, Tj=25oC		609		ns
tr	Rise Time			232		ns
td(off)	Turn-Off Delay Time			1676		ns
tf	Fall Time			192		ns
Eon	Turn-On Switching Loss			784		mJ
Eoff	Turn-Off Switching Loss			785		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=2400A, RG=0.82Ω,LS=32nH, VGE=-9V/+15V, Tj=125oC		732		ns
tr	Rise Time			280		ns
td(off)	Turn-Off Delay Time			2171		ns
tf	Fall Time			243		ns
Eon	Turn-On Switching Loss			1350		mJ
Eoff	Turn-Off Switching Loss			1083		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=2400A, RG=0.82Ω,LS=32nH, VGE=-9V/+15V, Tj=150oC		772		ns
tr	Rise Time			298		ns
td(off)	Turn-Off Delay Time			2294		ns
tf	Fall Time			298		ns
Eon	Turn-On Switching Loss			1533		mJ
Eoff	Turn-Off Switching Loss			1126		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V		10.5		kA

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=2400A,VGE=0V,Tj=25oC		1.80	2.25	V
		IF=2400A,VGE=0V,Tj=125oC		1.90
		IF=2400A,VGE=0V,Tj=150oC		1.95
Qr	Recovered Charge	VR=900V,IF=2400A, -di/dt=9570A/μs,VGE=-9V, LS=32nH,Tj=25oC		243		μC
IRM	Peak Reverse Recovery Current			1656		A
Erec	Reverse Recovery Energy			274		mJ
Qr	Recovered Charge	VR=900V,IF=2400A, -di/dt=7500A/μs,VGE=-9V, LS=32nH,Tj=125oC		425		μC
IRM	Peak Reverse Recovery Current			1692		A
Erec	Reverse Recovery Energy			438		mJ
Qr	Recovered Charge	VR=900V,IF=2400A, -di/dt=6990A/μs,VGE=-9V, LS=32nH,Tj=150oC		534		μC
IRM	Peak Reverse Recovery Current			1809		A
Erec	Reverse Recovery Energy			563		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		6.0		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.10		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			10.9 20.9	K/kW
RthCH	Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		6.1 11.7 4.0		K/kW
dCreep	Terminal-to-Heatsink Terminal-to-Terminal		32.2 32.2		mm
dClear	Terminal-to-Heatsink Terminal-to-Terminal		19.1 19.1		mm
M	Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6	1.8 8.0 4.25		2.1 10 5.75	N.m
G	Weight of Module		1500		g