GD200HFX120C8SN,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 200A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	363 200	A
ICRM	Repetitive Peak Collector Current tp limited by Tvjop	400	A
PD	Maximum Power Dissipation @ Tvj=175oC	1293	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	200	A
IFRM	Repetitive Peak Forward Current tp limited by Tvjop	400	A

Module

Symbol	Description	Values	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=200A,VGE=15V, Tvj=25oC		1.75	2.20	V
		IC=200A,VGE=15V, Tvj=125oC		2.00
		IC=200A,VGE=15V, Tvj=150oC		2.05
VGE(th)	Gate-Emitter Threshold Voltage	IC=8.0mA,VCE=VGE, Tvj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.0		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		18.6		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.52		nF
QG	Gate Charge	VGE=-15 …+15V		1.40		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=2.0Ω, Ls=50nH, VGE=±15V, Tvj=25oC		140		ns
tr	Rise Time			31		ns
td(off)	Turn-Off Delay Time			239		ns
tf	Fall Time			188		ns
Eon	Turn-On Switching Loss			11.2		mJ
Eoff	Turn-Off Switching Loss			13.4		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=2.0Ω, Ls=50nH, VGE=±15V, Tvj=125oC		146		ns
tr	Rise Time			36		ns
td(off)	Turn-Off Delay Time			284		ns
tf	Fall Time			284		ns
Eon	Turn-On Switching Loss			19.4		mJ
Eoff	Turn-Off Switching Loss			18.9		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=2.0Ω, Ls=50nH, VGE=±15V, Tvj=150oC		148		ns
tr	Rise Time			37		ns
td(off)	Turn-Off Delay Time			294		ns
tf	Fall Time			303		ns
Eon	Turn-On Switching Loss			21.7		mJ
Eoff	Turn-Off Switching Loss			19.8		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=150oC,VCC=800V, VCEM≤1200V		800		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=200A,VGE=0V,Tvj=25oC		1.85	2.30	V
		IF=200A,VGE=0V,Tvj=125oC		1.90
		IF=200A,VGE=0V,Tvj=150oC		1.95
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=5710A/μs, Ls=50nH, VGE=-15V,Tvj=25oC		20.0		μC
IRM	Peak Reverse Recovery Current			220		A
Erec	Reverse Recovery Energy			7.5		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=4740A/μs, Ls=50nH, VGE=-15V,Tvj=125oC		34.3		μC
IRM	Peak Reverse Recovery Current			209		A
Erec	Reverse Recovery Energy			12.9		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=4400A/μs, Ls=50nH, VGE=-15V,Tvj=150oC		38.7		μC
IRM	Peak Reverse Recovery Current			204		A
Erec	Reverse Recovery Energy			14.6		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.116 0.185	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.150 0.239 0.046		K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5	2.5 2.5		3.5 3.5	N.m
G	Weight of Module		200		g