GD200HFX120C2SA_B36,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 200A.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	340 200	A
ICM	Pulsed Collector Current tp=1ms	400	A
PD	Maximum Power Dissipation @ Tj=175oC	1190	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	200	A
IFM	Diode Maximum Forward Current tp=1ms	400	A

Module

Symbol	Description	Values	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=200A,VGE=15V, Tj=25oC		1.70	2.15	V
		IC=200A,VGE=15V, Tj=125oC		1.95
		IC=200A,VGE=15V, Tj=150oC		2.00
VGE(th)	Gate-Emitter Threshold Voltage	IC=8.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			3.75		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		20.7		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.58		nF
QG	Gate Charge	VGE=- 15…+15V		1.55		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=1. 1Ω,VGE=±15V, Tj=25oC		150		ns
tr	Rise Time			32		ns
td(off)	Turn-Off Delay Time			330		ns
tf	Fall Time			93		ns
Eon	Turn-On Switching Loss			9.7		mJ
Eoff	Turn-Off Switching Loss			11.3		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=1. 1Ω,VGE=±15V, Tj=125oC		161		ns
tr	Rise Time			37		ns
td(off)	Turn-Off Delay Time			412		ns
tf	Fall Time			165		ns
Eon	Turn-On Switching Loss			20.2		mJ
Eoff	Turn-Off Switching Loss			17.0		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=1. 1Ω,VGE=±15V, Tj=150oC		161		ns
tr	Rise Time			43		ns
td(off)	Turn-Off Delay Time			433		ns
tf	Fall Time			185		ns
Eon	Turn-On Switching Loss			22.4		mJ
Eoff	Turn-Off Switching Loss			19.1		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V		800		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=200A,VGE=0V,Tj=25oC		2.40	2.90	V
		IF=200A,VGE=0V,Tj=125oC		1.95
		IF=200A,VGE=0V,Tj=150oC		1.80
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=4950A/μs,VGE=- 15V Tj=25oC		20.3		μC
IRM	Peak Reverse Recovery Current			160		A
Erec	Reverse Recovery Energy			8.0		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=4950A/μs,VGE=- 15V Tj=125oC		38.4		μC
IRM	Peak Reverse Recovery Current			201		A
Erec	Reverse Recovery Energy			14.2		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=4950A/μs,VGE=- 15V Tj=150oC		44.2		μC
IRM	Peak Reverse Recovery Current			212		A
Erec	Reverse Recovery Energy			15.6		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			20	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.35		mΩ
RthJC	Junction-to-Case (per IGBT) Junction-to-Case (per Diode)			0.126 0.211	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.032 0.053 0.010		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		300		g