GD200HFQ120C2SD,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1200V 200A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	324 200	A
ICM	Pulsed Collector Current tp=1ms	400	A
PD	Maximum Power Dissipation @ Tvj=175oC	1181	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	200	A
IFM	Diode Maximum Forward Current tp=1ms	400	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=200A,VGE=15V, Tvj=25oC		1.85	2.30	V
		IC=200A,VGE=15V, Tvj=125oC		2.25
		IC=200A,VGE=15V, Tvj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=8.00mA,VCE=VGE, Tvj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			3.8		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		21.6		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.59		nF
QG	Gate Charge	VGE=-15…+15V		1.68		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=4.7Ω,LS=45nH, VGE=±15V,Tvj=25oC		100		ns
tr	Rise Time			72		ns
td(off)	Turn-Off Delay Time			303		ns
tf	Fall Time			71		ns
Eon	Turn-On Switching Loss			26.0		mJ
Eoff	Turn-Off Switching Loss			6.11		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=4.7Ω, LS=45nH, VGE=±15V,Tvj=125oC		99		ns
tr	Rise Time			76		ns
td(off)	Turn-Off Delay Time			325		ns
tf	Fall Time			130		ns
Eon	Turn-On Switching Loss			33.5		mJ
Eoff	Turn-Off Switching Loss			8.58		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=200A, RG=4.7Ω, LS=45nH, VGE=±15V,Tvj=150oC		98		ns
tr	Rise Time			80		ns
td(off)	Turn-Off Delay Time			345		ns
tf	Fall Time			121		ns
Eon	Turn-On Switching Loss			36.2		mJ
Eoff	Turn-Off Switching Loss			9.05		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=150oC,VCC=800V, VCEM≤1200V		750		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VF	Diode Forward Voltage	IF=200A,VGE=0V,Tvj=25oC		1.85	2.30	V
		IF=200A,VGE=0V,Tvj=125oC		1.90
		IF=200A,VGE=0V,Tvj=150oC		1.95
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=1890A/μs,VGE=-15V, LS=45nH,Tvj=25oC		19.4		μC
IRM	Peak Reverse Recovery Current			96		A
Erec	Reverse Recovery Energy			5.66		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=1680A/μs,VGE=-15V, LS=45nH,Tvj=125oC		29.5		μC
IRM	Peak Reverse Recovery Current			106		A
Erec	Reverse Recovery Energy			8.56		mJ
Qr	Recovered Charge	VR=600V,IF=200A, -di/dt=1600A/μs,VGE=-15V, LS=45nH,Tvj=150oC		32.2		μC
IRM	Peak Reverse Recovery Current			107		A
Erec	Reverse Recovery Energy			9.24		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			20	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.35		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.127 0.163	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.036 0.046 0.010		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		300		g