Brief introduction
IGBT module,produced by STARPOWER. 1200V 200A.
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=85oC |
294 200 |
A |
ICM |
Pulsed Collector Current tp=1ms |
400 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
1056 |
W |
Diode
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
200 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
400 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=200A,VGE=15V, Tj=25oC |
|
1.90 |
2.35 |
V |
IC=200A,VGE=15V, Tj= 125oC |
|
2.40 |
|
|||
IC=200A,VGE=15V, Tj=150oC |
|
2.55 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=5.0mA,VCE=VGE, Tj=25oC |
5.2 |
6.0 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
100 |
nA |
RGint |
Internal Gate Resistance |
|
|
3.75 |
|
Ω |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=0.75Ω,VGE=±15V, Tj=25oC |
|
374 |
|
ns |
tr |
Rise Time |
|
50 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
326 |
|
ns |
|
tf |
Fall Time |
|
204 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
13.8 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
10.4 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=0.75Ω,VGE=±15V, Tj= 125oC |
|
419 |
|
ns |
tr |
Rise Time |
|
63 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
383 |
|
ns |
|
tf |
Fall Time |
|
218 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
20.8 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
11.9 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=200A, RG=0.75Ω,VGE=±15V, Tj= 150oC |
|
419 |
|
ns |
tr |
Rise Time |
|
65 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
388 |
|
ns |
|
tf |
Fall Time |
|
222 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
22.9 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
11.9 |
|
mJ |
Diode Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=200A,VGE=0V,Tj=25oC |
|
1.90 |
2.35 |
V |
IF=200A,VGE=0V,Tj= 125oC |
|
1.90 |
|
|||
IF=200A,VGE=0V,Tj= 150oC |
|
1.90 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=200A, -di/dt=3200A/μs,VGE=- 15V Tj=25oC |
|
10.2 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
90 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
3.40 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=200A, -di/dt=3200A/μs,VGE=- 15V Tj= 125oC |
|
26.2 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
132 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
9.75 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=200A, -di/dt=3200A/μs,VGE=- 15V Tj= 150oC |
|
30.4 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
142 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
11.3 |
|
mJ |
ModuleCharacteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
|
26 |
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.62 |
|
mΩ |
RthJC |
Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
|
0.142 0.202 |
K/W |
|
RthCH |
Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) |
|
0.157 0.223 0.046 |
|
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
2.5 3.0 |
|
5.0 5.0 |
N.m |
G |
Weight of Module |
|
200 |
|
g |
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