1200V 150A，package：C6
Brief introduction
IGBT module,produced by STARPOWER. 1200V 150A.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT-inverter
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=100oC |
292 150 |
A |
ICM |
Pulsed Collector Current tp=1ms |
300 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
1111 |
W |
Diode-inverter
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
150 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
300 |
A |
Diode-rectifier
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1600 |
V |
IO |
Average Output Current 50Hz/60Hz,sine wave |
150 |
A |
IFSM |
Surge Forward Current tp=10ms @ Tj=25oC @ Tj=150oC |
1600 1400 |
A |
I2t |
I2t-value,tp=10ms @ Tj=25oC @ Tj=150oC |
13000 9800 |
A2s |
IGBT-brake
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1200 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC=100oC |
200 100 |
A |
ICM |
Pulsed Collector Current tp=1ms |
200 |
A |
PD |
Maximum Power Dissipation @ Tj=175oC |
833 |
W |
Diode-brake
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
IF |
Diode Continuous Forward Current |
50 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
100 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature(inverter,brake) Maximum Junction Temperature (rectifier) |
175 150 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
IGBT-inverter Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=150A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
IC=150A,VGE=15V, Tj=125oC |
|
1.95 |
|
|||
IC=150A,VGE=15V, Tj=150oC |
|
2.00 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=6.00mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
2.0 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
15.5 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.44 |
|
nF |
|
QG |
Gate Charge |
VGE=-15 …+15V |
|
1.17 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=1. 1Ω,VGE=±15V, Tj=25oC |
|
96 |
|
ns |
tr |
Rise Time |
|
30 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
255 |
|
ns |
|
tf |
Fall Time |
|
269 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
8.59 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
12.3 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=1. 1Ω,VGE=±15V, Tj=125oC |
|
117 |
|
ns |
tr |
Rise Time |
|
37 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
307 |
|
ns |
|
tf |
Fall Time |
|
371 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
13.2 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
16.8 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=150A, RG=1. 1Ω,VGE=±15V, Tj=150oC |
|
122 |
|
ns |
tr |
Rise Time |
|
38 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
315 |
|
ns |
|
tf |
Fall Time |
|
425 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
14.8 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
18.1 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V |
|
600 |
|
A |
Diode-inverter Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VF |
Diode Forward Voltage |
IF=150A,VGE=0V,Tj=25oC |
|
1.85 |
2.25 |
V |
IF=150A,VGE=0V,Tj=125oC |
|
1.90 |
|
|||
IF=150A,VGE=0V,Tj=150oC |
|
1.95 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=150A, -di/dt=4750A/μs,VGE=-15V Tj=25oC |
|
8.62 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
177 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
5.68 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=150A, -di/dt=3950A/μs,VGE=-15V Tj=125oC |
|
16.7 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
191 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
10.2 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=150A, -di/dt=3750A/μs,VGE=-15V Tj=150oC |
|
19.4 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
196 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
12.1 |
|
mJ |
Diode-rectifier Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VF |
Diode Forward Voltage |
IC=150A,Tj=150oC |
|
1.00 |
|
V |
IR |
Reverse Current |
Tj=150oC,VR=1600V |
|
|
3.0 |
mA |
IGBT-brake Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=100A,VGE=15V, Tj=25oC |
|
1.70 |
2.15 |
V |
IC=100A,VGE=15V, Tj=125oC |
|
1.95 |
|
|||
IC=100A,VGE=15V, Tj=150oC |
|
2.00 |
|
|||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=4.00mA,VCE=VGE, Tj=25oC |
5.6 |
6.2 |
6.8 |
V |
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25oC |
|
|
1.0 |
mA |
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25oC |
|
|
400 |
nA |
RGint |
Internal Gate Resistance |
|
|
7.5 |
|
Ω |
Cies |
Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
|
10.4 |
|
nF |
Cres |
Reverse Transfer Capacitance |
|
0.29 |
|
nF |
|
QG |
Gate Charge |
VGE=-15 …+15V |
|
0.08 |
|
μC |
td(on) |
Turn-On Delay Time |
VCC=600V,IC=100A, RG=1.6Ω,VGE=±15V, Tj=25oC |
|
170 |
|
ns |
tr |
Rise Time |
|
32 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
360 |
|
ns |
|
tf |
Fall Time |
|
86 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
5.90 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
6.05 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=100A, RG=1.6Ω,VGE=±15V, Tj=125oC |
|
180 |
|
ns |
tr |
Rise Time |
|
42 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
470 |
|
ns |
|
tf |
Fall Time |
|
165 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
9.10 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
9.35 |
|
mJ |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=100A, RG=1.6Ω,VGE=±15V, Tj=150oC |
|
181 |
|
ns |
tr |
Rise Time |
|
43 |
|
ns |
|
td(off) |
Turn-Off Delay Time |
|
480 |
|
ns |
|
tf |
Fall Time |
|
186 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
10.0 |
|
mJ |
|
Eoff |
Turn-Off Switching Loss |
|
10.5 |
|
mJ |
|
|
ISC |
SC Data |
tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V |
|
400 |
|
A |
Diode-brake Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=50A,VGE=0V,Tj=25oC |
|
1.85 |
2.30 |
V |
IF=50A,VGE=0V,Tj=125oC |
|
1.90 |
|
|||
IF=50A,VGE=0V,Tj=150oC |
|
1.95 |
|
|||
Qr |
Recovered Charge |
VR=600V,IF=50A, -di/dt=1400A/μs,VGE=-15V Tj=25oC |
|
6.3 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
62 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
1.67 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=50A, -di/dt=1400A/μs,VGE=-15V Tj=125oC |
|
10.1 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
69 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
2.94 |
|
mJ |
|
Qr |
Recovered Charge |
VR=600V,IF=50A, -di/dt=1400A/μs,VGE=-15V Tj=150oC |
|
11.5 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
72 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
3.63 |
|
mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TC=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
40 |
|
nH |
RCC’+EE’ RAA’+CC’ |
Module Lead Resistance,Terminal to Chip |
|
4.00 3.00 |
|
mΩ |
|
RthJC |
Junction-to-Case (perIGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (perIGBT-brake) Junction-to-Case (per Diode-brake) |
|
|
0.135 0.300 0.238 0.180 0.472 |
K/W |
|
RthCH |
Case-to-Heatsink (perIGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (perIGBT-brake) Case-to-Heatsink (per Diode-brake) Case-to-Heatsink (per Module) |
|
0.118 0.263 0.208 0.158 0.413 0.009 |
|
K/W |
M |
Mounting Torque, Screw:M5 |
3.0 |
|
6.0 |
N.m |
Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.
EN
