GD150PFX170C6SG,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1700V 150A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT-inverter

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=95oC	232 150	A
ICM	Pulsed Collector Current tp=1ms	300	A
PD	Maximum Power Dissipation @ Tj=175oC	828	W

Diode-inverter

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	150	A
IFM	Diode Maximum Forward Current tp=1ms	300	A

Diode-rectifier

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1800	V
IO	Average Output Current 50Hz/60Hz,sine wave	150	A
IFSM	Surge Forward Current tp=10ms @ Tj=25oC @ Tj=150oC	1600 1400	A
I2t	I2t-value,tp=10ms @ Tj=25oC @ Tj=150oC	13000 9800	A2s

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature(inverter) Maximum Junction Temperature (rectifier)	175 150	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=150A,VGE=15V, Tj=25oC		1.85	2.20	V
		IC=150A,VGE=15V, Tj=125oC		2.25
		IC=150A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=6.00mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			4.3		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		18.1		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.44		nF
QG	Gate Charge	VGE=-15 …+15V		1.41		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=150A, RG=4.7Ω,VGE=±15V, LS=46nH,Tj=25oC		292		ns
tr	Rise Time			55		ns
td(off)	Turn-Off Delay Time			458		ns
tf	Fall Time			392		ns
Eon	Turn-On Switching Loss			33.6		mJ
Eoff	Turn-Off Switching Loss			26.3		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=150A, RG=4.7Ω,VGE=±15V, LS=46nH,Tj=125oC		342		ns
tr	Rise Time			67		ns
td(off)	Turn-Off Delay Time			520		ns
tf	Fall Time			568		ns
Eon	Turn-On Switching Loss			50.5		mJ
Eoff	Turn-Off Switching Loss			35.7		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=150A, RG=4.7Ω,VGE=±15V, LS=46nH,Tj=150oC		352		ns
tr	Rise Time			68		ns
td(off)	Turn-Off Delay Time			535		ns
tf	Fall Time			589		ns
Eon	Turn-On Switching Loss			53.3		mJ
Eoff	Turn-Off Switching Loss			36.3		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V		600		A

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=150A,VGE=0V,Tj=25oC		1.80	2.25	V
		IF=150A,VGE=0V,Tj=125oC		1.90
		IF=150A,VGE=0V,Tj=150oC		1.95
Qr	Recovered Charge	VR=900V,IF=150A, -di/dt=2340A/μs,VGE=-15V LS=46nH,Tj=25oC		21.3		μC
IRM	Peak Reverse Recovery Current			183		A
Erec	Reverse Recovery Energy			20.4		mJ
Qr	Recovered Charge	VR=900V,IF=150A, -di/dt=2000A/μs,VGE=-15V LS=46nH,Tj=125oC		36.2		μC
IRM	Peak Reverse Recovery Current			196		A
Erec	Reverse Recovery Energy			33.9		mJ
Qr	Recovered Charge	VR=900V,IF=150A, -di/dt=1830A/μs,VGE=-15V LS=46nH,Tj=150oC		41.2		μC
IRM	Peak Reverse Recovery Current			199		A
Erec	Reverse Recovery Energy			36.3		mJ

Diode-rectifier Characteristics TC=25oC unless otherwise noted

NTC Characteristics TC=25oC unless otherwise noted

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
RthJC	Junction-to-Case (perIGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier)			0.181 0.300 0.289	K/W
RthCH	Case-to-Heatsink (perIGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per Module)		0.092 0.152 0.146 0.009		K/W
M	Mounting Torque, Screw:M5	3.0		6.0	N.m
G	Weight of Module		300		g