GD150HFX170C1S,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1700V 150A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=95oC	229 150	A
ICM	Pulsed Collector Current tp=1ms	300	A
PD	Maximum Power Dissipation @ Tj=175oC	815	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	150	A
IFM	Diode Maximum Forward Current tp=1ms	300	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=150A,VGE=15V, Tj=25oC		1.85	2.30	V
		IC=150A,VGE=15V, Tj=125oC		2.25
		IC=150A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=6.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			5.0		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		18.1		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.44		nF
QG	Gate Charge	VGE=-15 …+15V		1.41		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=150A, RG=3.3Ω,VGE=±15V, LS=70nH, Tj=25oC		303		ns
tr	Rise Time			75		ns
td(off)	Turn-Off Delay Time			417		ns
tf	Fall Time			352		ns
Eon	Turn-On Switching Loss			42.3		mJ
Eoff	Turn-Off Switching Loss			25.3		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=150A, RG=3.3Ω,VGE=±15V, LS=70nH,Tj=125oC		323		ns
tr	Rise Time			88		ns
td(off)	Turn-Off Delay Time			479		ns
tf	Fall Time			509		ns
Eon	Turn-On Switching Loss			58.9		mJ
Eoff	Turn-Off Switching Loss			34.9		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=150A, RG=3.3Ω,VGE=±15V, LS=70nH,Tj=150oC		327		ns
tr	Rise Time			90		ns
td(off)	Turn-Off Delay Time			498		ns
tf	Fall Time			608		ns
Eon	Turn-On Switching Loss			65.6		mJ
Eoff	Turn-Off Switching Loss			40.2		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V		600		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=150A,VGE=0V,Tj=25oC		1.80	2.25	V
		IF=150A,VGE=0V,Tj=125oC		1.90
		IF=150A,VGE=0V,Tj=150oC		1.95
Qr	Recovered Charge	VR=900V,IF=150A, -di/dt=1510A/μs,VGE=-15V LS=70nH, Tj=25oC		26.2		μC
IRM	Peak Reverse Recovery Current			131		A
Erec	Reverse Recovery Energy			21.6		mJ
Qr	Recovered Charge	VR=900V,IF=150A, -di/dt=1280A/μs,VGE=-15V LS=70nH, Tj=125oC		48.0		μC
IRM	Peak Reverse Recovery Current			140		A
Erec	Reverse Recovery Energy			40.1		mJ
Qr	Recovered Charge	VR=900V,IF=150A, -di/dt=1240A/μs,VGE=-15V LS=70nH, Tj=150oC		52.3		μC
IRM	Peak Reverse Recovery Current			142		A
Erec	Reverse Recovery Energy			42.5		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			30	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.65		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.184 0.368	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.150 0.300 0.050		K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		150		g