GD150HCX170C6SA ,IGBT Module,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

281

150

A

ICM

Pulsed Collector Current tp=1ms

300

A

PD

Maximum Power Dissipation @ Tvj=175oC

1136

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

150

A

IFM

Diode Maximum Forward Current tp=1ms

300

A

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=150A,VGE=15V, Tvj=25oC

1.85

2.20

V

IC=150A,VGE=15V, Tvj=125oC

2.25

IC=150A,VGE=15V, Tvj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC=6.00mA,VCE=VGE, Tvj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

4.3

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

18.1

nF

Cres

Reverse Transfer Capacitance

0.44

nF

QG

Gate Charge

VGE=-15 …+15V

1.41

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=150A, RG=0.51Ω,VGE=±15V, Ls=48nH,Tvj=25oC

206

ns

tr

Rise Time

44

ns

td(off)

Turn-Off Delay Time

337

ns

tf

Fall Time

331

ns

Eon

Turn-On Switching Loss

39.5

mJ

Eoff

Turn-Off Switching Loss

21.7

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=150A, RG=0.51Ω,VGE=±15V, Ls=48nH,Tvj=125oC

232

ns

tr

Rise Time

54

ns

td(off)

Turn-Off Delay Time

422

ns

tf

Fall Time

514

ns

Eon

Turn-On Switching Loss

55.3

mJ

Eoff

Turn-Off Switching Loss

32.7

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=150A, RG=0.51Ω,VGE=±15V, Ls=48nH,Tvj=150oC

239

ns

tr

Rise Time

57

ns

td(off)

Turn-Off Delay Time

442

ns

tf

Fall Time

559

ns

Eon

Turn-On Switching Loss

60.8

mJ

Eoff

Turn-Off Switching Loss

34.9

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=150oC,VCC=1000V,

VCEM≤1700V

600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=150A,VGE=0V,Tvj=25oC

1.80

2.25

V

IF=150A,VGE=0V,Tvj=125oC

1.95

IF=150A,VGE=0V,Tvj=150oC

1.90

Qr

Recovered Charge

VR=900V,IF=150A,

-di/dt=2464A/μs,VGE=-15V Ls=48nH,Tvj=25oC

42.8

μC

IRM

Peak Reverse

Recovery Current

142

A

Erec

Reverse Recovery Energy

22.3

mJ

Qr

Recovered Charge

VR=900V,IF=150A,

-di/dt=1956A/μs,VGE=-15V Ls=48nH,Tvj=125oC

64.7

μC

IRM

Peak Reverse

Recovery Current

147

A

Erec

Reverse Recovery Energy

35.0

mJ

Qr

Recovered Charge

VR=900V,IF=150A,

-di/dt=1795A/μs,VGE=-15V Ls=48nH,Tvj=150oC

72.0

μC

IRM

Peak Reverse

Recovery Current

148

A

Erec

Reverse Recovery Energy

38.8

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.10

mΩ

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.132 0.209

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.029 0.047 0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0 3.0

6.0 6.0

N.m

G

Weight of Module

350

g