GD2400SGX170C4S,IGBT Module,High current igbt module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1700V 1200A,A3.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	2206 1200	A
ICM	Pulsed Collector Current tp=1ms	2400	A
PD	Maximum Power Dissipation @ Tj=175oC	8.77	KW

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	1200	A
IFM	Diode Maximum Forward Current tp=1ms	2400	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=1200A,VGE=15V, Tj=25oC		1.85	2.20	V
		IC=1200A,VGE=15V, Tj=125oC		2.25
		IC=1200A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=48.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.0		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		145		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		3.51		nF
QG	Gate Charge	VGE=-15 …+15V		11.3		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=1200A, RG=1.0Ω, VGE=-9/+15V, LS=65nH,Tj=25oC		440		ns
tr	Rise Time			112		ns
td(off)	Turn-Off Delay Time			1200		ns
tf	Fall Time			317		ns
Eon	Turn-On Switching Loss			271		mJ
Eoff	Turn-Off Switching Loss			295		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=1200A, RG=1.0Ω, VGE=-9/+15V, LS=65nH,Tj=125oC		542		ns
tr	Rise Time			153		ns
td(off)	Turn-Off Delay Time			1657		ns
tf	Fall Time			385		ns
Eon	Turn-On Switching Loss			513		mJ
Eoff	Turn-Off Switching Loss			347		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=1200A, RG=1.0Ω, VGE=-9/+15V, LS=65nH,Tj=150oC		547		ns
tr	Rise Time			165		ns
td(off)	Turn-Off Delay Time			1695		ns
tf	Fall Time			407		ns
Eon	Turn-On Switching Loss			573		mJ
Eoff	Turn-Off Switching Loss			389		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V		4800		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=1200A,VGE=0V, Tj=25℃		1.80	2.25	V
		IF=1200A,VGE=0V, Tj=125℃		1.90
		IF=1200A,VGE=0V, Tj=150℃		1.95
Qr	Recovered Charge	VCC=900V,IF=1200A, -di/dt=10500A/μs,VGE=-9V, LS=65nH,Tj=25℃		190		μC
IRM	Peak Reverse Recovery Current			844		A
Erec	Reverse Recovery Energy			192		mJ
Qr	Recovered Charge	VCC=900V,IF=1200A, -di/dt=7050A/μs,VGE=-9V, LS=65nH,Tj=125℃		327		μC
IRM	Peak Reverse Recovery Current			1094		A
Erec	Reverse Recovery Energy			263		mJ
Qr	Recovered Charge	VCC=900V,IF=1200A, -di/dt=6330A/μs,VGE=-9V, LS=65nH,Tj=150℃		368		μC
IRM	Peak Reverse Recovery Current			1111		A
Erec	Reverse Recovery Energy			275		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		12		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.19		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			17.1 26.2	K/kW
RthCH	Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		9.9 15.2 6.0		K/kW
M	Power Terminal Screw:M4 Power Terminal Screw:M8 Mounting Screw:M6	1.8 8.0 4.25		2.1 10.0 5.75	N.m
G	Weight of Module		1050		g