GD2400SGX170C4S,IGBT Module,High current igbt module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1700V 1200A,A3.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	1965 1200	A
ICM	Pulsed Collector Current tp=1ms	2400	A
PD	Maximum Power Dissipation @ Tvj=175oC	6.55	kW

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	1200	A
IFM	Diode Maximum Forward Current tp=1ms	2400	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=1200A,VGE=15V, Tvj=25oC		1.85	2.30	V
		IC=1200A,VGE=15V, Tvj=125oC		2.25
		IC=1200A,VGE=15V, Tvj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=48.0mA,VCE=VGE, Tvj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.6		Ω
Cies	Input Capacitance	VCE=25V,f=100kHz, VGE=0V		142		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=100kHz, VGE=0V		3.57		nF
QG	Gate Charge	VGE=-15 …+15V		11.8		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=1200A, RGon=1.5Ω,RGoff=3.3Ω, VGE=-10/+15V, LS=110nH,Tvj=25oC		700		ns
tr	Rise Time			420		ns
td(off)	Turn-Off Delay Time			1620		ns
tf	Fall Time			231		ns
Eon	Turn-On Switching Loss			616		mJ
Eoff	Turn-Off Switching Loss			419		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=1200A, RGon=1.5Ω,RGoff=3.3Ω, VGE=-10/+15V, LS=110nH,Tvj=125oC		869		ns
tr	Rise Time			495		ns
td(off)	Turn-Off Delay Time			1976		ns
tf	Fall Time			298		ns
Eon	Turn-On Switching Loss			898		mJ
Eoff	Turn-Off Switching Loss			530		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=1200A, RGon=1.5Ω,RGoff=3.3Ω, VGE=-10/+15V, LS=110nH,Tvj=150oC		941		ns
tr	Rise Time			508		ns
td(off)	Turn-Off Delay Time			2128		ns
tf	Fall Time			321		ns
Eon	Turn-On Switching Loss			981		mJ
Eoff	Turn-Off Switching Loss			557		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=150oC,VCC=1000V, VCEM≤1700V		4800		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=1200A,VGE=0V,Tvj=25oC		1.80	2.25	V
		IF=1200A,VGE=0V,Tvj=125oC		1.90
		IF=1200A,VGE=0V,Tvj=150oC		1.95
Qr	Recovered Charge	VR=900V,IF=1200A, -di/dt=2430A/μs,VGE=-10V, LS=110nH,Tvj=25oC		217		μC
IRM	Peak Reverse Recovery Current			490		A
Erec	Reverse Recovery Energy			108		mJ
Qr	Recovered Charge	VR=900V,IF=1200A, -di/dt=2070A/μs,VGE=-10V, LS=110nH,Tvj=125oC		359		μC
IRM	Peak Reverse Recovery Current			550		A
Erec	Reverse Recovery Energy			165		mJ
Qr	Recovered Charge	VR=900V,IF=1200A, -di/dt=1970A/μs,VGE=-10V, LS=110nH,Tvj=150oC		423		μC
IRM	Peak Reverse Recovery Current			570		A
Erec	Reverse Recovery Energy			200		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		20		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.37		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			22.9 44.2	K/kW
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		18.2 35.2 6.0		K/kW
M	Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6	1.8 8.0 4.25		2.1 10 5.75	N.m
G	Weight of Module		1500		g