GD100HHU120C6SD,IGBT Module,STARPOWER

1200V 100A，package：C6

Brand:

STARPOWER

Spu:

GD100HHU120C6SD

Brief introduction

IGBT module,produced by STARPOWER. 1200V 100A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=75oC	146 100	A
ICM	Pulsed Collector Current tp=1ms	200	A
PD	Maximum Power Dissipation @ Tvj=150oC	771	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	100	A
IFM	Diode Maximum Forward Current tp=1ms	200	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	150	oC
Tvjop	Operating Junction Temperature	-40 to +125	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=100A,VGE=15V, Tvj=25oC		3.00	3.45	V
VCE(sat)	Collector to Emitter Saturation Voltage	IC=100A,VGE=15V, Tvj=125oC		3.80		V
VGE(th)	Gate-Emitter Threshold Voltage	IC=4.0mA,VCE=VGE, Tvj=25oC	4.5	5.5	6.5	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.0		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		6.50		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.42		nF
QG	Gate Charge	VGE=-15…+15V		1.10		μC
td(on)	Turn-On Delay Time	VCC=600V,IC=100A, RG=9.1Ω,VGE=±15V, Ls=48nH,Tvj=25oC		38		ns
tr	Rise Time			50		ns
td(off)	Turn-Off Delay Time			330		ns
tf	Fall Time			27		ns
Eon	Turn-On Switching Loss			8.92		mJ
Eoff	Turn-Off Switching Loss			2.06		mJ
td(on)	Turn-On Delay Time	VCC=600V,IC=100A, RG=9.1Ω,VGE=±15V, Ls=48nH,Tvj=125oC		37		ns
tr	Rise Time			50		ns
td(off)	Turn-Off Delay Time			362		ns
tf	Fall Time			43		ns
Eon	Turn-On Switching Loss			10.7		mJ
Eoff	Turn-Off Switching Loss			3.69		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=125oC,VCC=900V, VCEM≤1200V		650		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=100A,VGE=0V,Tvj=25oC		1.85	2.30	V
VF	Diode Forward Voltage	IF=100A,VGE=0V,Tvj=125oC		1.90		V
Qr	Recovered Charge	VR=600V,IF=100A, -di/dt=2245A/μs,VGE=-15V Ls=48nH,Tvj=25oC		11.5		μC
IRM	Peak Reverse Recovery Current			101		A
Erec	Reverse Recovery Energy			4.08		mJ
Qr	Recovered Charge	VR=600V,IF=100A, -di/dt=2352A/μs,VGE=-15V Ls=48nH,Tvj=125oC		19.0		μC
IRM	Peak Reverse Recovery Current			120		A
Erec	Reverse Recovery Energy			7.47		mJ

NTC Characteristics TC=25oC unless otherwise noted

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		21		nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		2.60		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.162 0.401	K/W
RthCH	Case-to-Sink (perIGBT) Case-to-Sink (per Diode) Case-to-Heatsink (per Module)		0.051 0.125 0.009		K/W
M	Mounting Torque, Screw M6	3.0		6.0	N.m
G	Weight of Module		300		g