GD100HFX170C1S,IGBT Module,STARPOWER

Brief introduction

IGBT module,produced by STARPOWER. 1700V 100A.

Features

Typical Applications

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=100oC	173 112	A
ICM	Pulsed Collector Current tp=1ms	200	A
PD	Maximum Power Dissipation @ Tvj=175oC	666	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	100	A
IFM	Diode Maximum Forward Current tp=1ms	200	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=100A,VGE=15V, Tvj=25oC		1.85	2.20	V
		IC=100A,VGE=15V, Tvj=125oC		2.25
		IC=100A,VGE=15V, Tvj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC=4.0mA,VCE=VGE, Tvj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			7.5		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		12.0		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		0.29		nF
QG	Gate Charge	VGE=-15…+15V		0.94		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=100A, RG=4.7Ω,VGE=±15V, Ls=60nH, Tvj=25oC		272		ns
tr	Rise Time			55		ns
td(off)	Turn-Off Delay Time			369		ns
tf	Fall Time			389		ns
Eon	Turn-On Switching Loss			28.2		mJ
Eoff	Turn-Off Switching Loss			16.4		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=100A, RG=4.7Ω,VGE=±15V, Ls=60nH, Tvj=125oC		296		ns
tr	Rise Time			66		ns
td(off)	Turn-Off Delay Time			448		ns
tf	Fall Time			576		ns
Eon	Turn-On Switching Loss			40.1		mJ
Eoff	Turn-Off Switching Loss			24.1		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=100A, RG=4.7Ω,VGE=±15V, Ls=60nH, Tvj=150oC		302		ns
tr	Rise Time			69		ns
td(off)	Turn-Off Delay Time			463		ns
tf	Fall Time			607		ns
Eon	Turn-On Switching Loss			43.9		mJ
Eoff	Turn-Off Switching Loss			25.7		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tvj=150oC,VCC=1000V VCEM≤1700V		400		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=100A,VGE=0V,Tvj=25oC		1.80	2.25	V
		IF=100A,VGE=0V,Tvj=125oC		1.90
		IF=100A,VGE=0V,Tvj=150oC		1.95
Qr	Recovered Charge	VR=900V,IF=100A, -di/dt=1290A/μs,VGE=-15V Ls=60nH, Tvj=25oC		23.5		μC
IRM	Peak Reverse Recovery Current			85		A
Erec	Reverse Recovery Energy			11.5		mJ
Qr	Recovered Charge	VR=900V,IF=100A, -di/dt=1020A/μs,VGE=-15V Ls=60nH, Tvj=125oC		36.6		μC
IRM	Peak Reverse Recovery Current			88		A
Erec	Reverse Recovery Energy			18.1		mJ
Qr	Recovered Charge	VR=900V,IF=100A, -di/dt=960A/μs,VGE=-15V Ls=60nH, Tvj=150oC		46.2		μC
IRM	Peak Reverse Recovery Current			91		A
Erec	Reverse Recovery Energy			24.6		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			30	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.65		mΩ
RthJC	Junction-to-Case (perIGBT) Junction-to-Case (per Diode)			0.225 0.391	K/W
RthCH	Case-to-Heatsink (perIGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.158 0.274 0.050		K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		150		g