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IGBT Module 1700V

IGBT Module 1700V

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GD100HCX170C6SA ,IGBT Module,STARPOWER

IGBT Module,1700V 100A

Brand:
STARPOWER
Spu:
GD100HCX170C6SA
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module,produced by STARPOWER. 1700V 100A.

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC @ TC=100oC

196

100

A

ICM

Pulsed Collector Current tp=1ms

200

A

PD

Maximum Power Dissipation @ Tvj=175oC

815

W

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

100

A

IFM

Diode Maximum Forward Current tp=1ms

200

A

Module

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=100A,VGE=15V, Tvj=25oC

1.85

2.20

V

IC=100A,VGE=15V, Tvj=125oC

2.25

IC=100A,VGE=15V, Tvj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC=4.00mA,VCE=VGE, Tvj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

7.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz, VGE=0V

12.0

nF

Cres

Reverse Transfer Capacitance

0.29

nF

QG

Gate Charge

VGE=-15 …+15V

0.94

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=100A, RG=1.0Ω,VGE=±15V, Ls=52nH,Tvj=25oC

196

ns

tr

Rise Time

44

ns

td(off)

Turn-Off Delay Time

298

ns

tf

Fall Time

367

ns

Eon

Turn-On Switching Loss

26.4

mJ

Eoff

Turn-Off Switching Loss

14.7

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=100A, RG=1.0Ω,VGE=±15V, Ls=52nH,Tvj=125oC

217

ns

tr

Rise Time

53

ns

td(off)

Turn-Off Delay Time

361

ns

tf

Fall Time

516

ns

Eon

Turn-On Switching Loss

36.0

mJ

Eoff

Turn-Off Switching Loss

21.0

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=100A, RG=1.0Ω,VGE=±15V, Ls=52nH,Tvj=150oC

223

ns

tr

Rise Time

56

ns

td(off)

Turn-Off Delay Time

374

ns

tf

Fall Time

551

ns

Eon

Turn-On Switching Loss

39.1

mJ

Eoff

Turn-Off Switching Loss

22.4

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tvj=150oC,VCC=1000V,

VCEM≤1700V

400

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=100A,VGE=0V,Tvj=25oC

1.80

2.25

V

IF=100A,VGE=0V,Tvj=125oC

1.95

IF=100A,VGE=0V,Tvj=150oC

1.90

Qr

Recovered Charge

VR=900V,IF=100A,

-di/dt=1332A/μs,VGE=-15V Ls=52nH,Tvj=25oC

26.8

μC

IRM

Peak Reverse

Recovery Current

78

A

Erec

Reverse Recovery Energy

14.4

mJ

Qr

Recovered Charge

VR=900V,IF=100A,

-di/dt=1091A/μs,VGE=-15V Ls=52nH,Tvj=125oC

42.3

μC

IRM

Peak Reverse

Recovery Current

86

A

Erec

Reverse Recovery Energy

23.7

mJ

Qr

Recovered Charge

VR=900V,IF=100A,

-di/dt=1060A/μs,VGE=-15V Ls=52nH,Tvj=150oC

48.2

μC

IRM

Peak Reverse

Recovery Current

89

A

Erec

Reverse Recovery Energy

27.4

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.10

RthJC

Junction-to-Case (perIGBT) Junction-to-Case (per Diode)

0.184 0.274

K/W

RthCH

Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)

0.060 0.090 0.009

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5

3.0 3.0

6.0 6.0

N.m

G

Weight of Module

350

g

Outline

image(c537ef1333).png

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