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IGBT Module 750V

IGBT Module 750V

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GD1000HTA75P6HT

750V 1000A,

Brand:
STARPOWER
Spu:
GD1000HTA75P6HT
Appurtenance:

Product Brochure:DOWNLOAD

  • Introduction
  • Outline
  • Equivalent Circuit Schematic
Introduction

Brief introduction

IGBT module,produced by STARPOWER. 750V 1000A,P6.

Features

  • Low VCE(sat) Trench IGBT technology
  • Low switching losses
  • 6μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper pinfin baseplate using Si3N4 AMB technology

Typical Applications

  • Automotive application
  • Hybrid and electric vehicle
  • Inverter for motor drive

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

750

V

VGES

Gate-Emitter Voltage

±20

V

ICN

Implemented Collector Current

1000

A

IC

Collector Current @ TF=125oC

450

A

ICM

Pulsed Collector Current tp=1ms

2000

A

PD

Maximum Power Dissipation @ TF=75oC Tvj=175oC

1282

W

Diode

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

750

V

IFN

Implemented Collector Current

1000

A

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current tp=1ms

2000

A

Module

Symbol

Description

Value

Unit

Tvjmax

Maximum Junction Temperature

175

oC

Tvjop

Operating Junction Temperature continuous

For 10s within a period of 30s,occurrence maximum 3000 times over lifetime

-40 to +150 +150 to +175

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

2500

V

dCreep

Terminal to Heatsink Terminal to Terminal

9.0 9.0

mm

dClear

Terminal to Heatsink Terminal to Terminal

4.5 4.5

mm

IGBT Characteristics TF=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter Saturation Voltage

IC=450A,VGE=15V, Tvj=25oC

1.10

1.35

V

IC=450A,VGE=15V, Tvj=150oC

1.10

IC=450A,VGE=15V, Tvj=175oC

1.10

IC=1000A,VGE=15V, Tvj=25oC

1.40

IC=1000A,VGE=15V, Tvj=175oC

1.60

VGE(th)

Gate-Emitter Threshold Voltage

IC=12.9mA,VCE=VGE, Tvj=25oC

5.5

6.4

7.0

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tvj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tvj=25oC

400

nA

RGint

Internal Gate Resistance

1.2

Ω

Cies

Input Capacitance

VCE=50V,f=100kHz, VGE=0V

66.7

nF

Coes

Output Capacitance

1.50

nF

Cres

Reverse Transfer Capacitance

0.35

nF

QG

Gate Charge

VCE =400V,IC =450A, VGE=-15…+15V

4.74

μC

td(on)

Turn-On Delay Time

VCC=400V,IC=450A,

RGon=1.2Ω,RGoff=1.0Ω, VGE=-8V/+15V,

LS=24nH, Tvj=25oC

244

ns

tr

Rise Time

61

ns

td(off)

Turn-Off Delay Time

557

ns

tf

Fall Time

133

ns

Eon

Turn-On Switching Loss

11.0

mJ

Eoff

Turn-Off Switching Loss

22.8

mJ

td(on)

Turn-On Delay Time

VCC=400V,IC=450A,

RGon=1.2Ω,RGoff=1.0Ω, VGE=-8V/+15V,

LS=24nH, Tvj=150oC

260

ns

tr

Rise Time

68

ns

td(off)

Turn-Off Delay Time

636

ns

tf

Fall Time

226

ns

Eon

Turn-On Switching Loss

16.9

mJ

Eoff

Turn-Off Switching Loss

32.2

mJ

td(on)

Turn-On Delay Time

VCC=400V,IC=450A,

RGon=1.2Ω,RGoff=1.0Ω, VGE=-8V/+15V,

LS=24nH, Tvj=175oC

264

ns

tr

Rise Time

70

ns

td(off)

Turn-Off Delay Time

673

ns

tf

Fall Time

239

ns

Eon

Turn-On Switching Loss

19.2

mJ

Eoff

Turn-Off Switching Loss

33.6

mJ

ISC

SC Data

tP≤6μs,VGE=15V,

Tvj=25oC,VCC=400V, VCEM≤750V

4900

A

tP≤3μs,VGE=15V,

Tvj=175oC,VCC=400V, VCEM≤750V

3800

Diode Characteristics TF=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward Voltage

IF=450A,VGE=0V,Tvj=25oC

1.40

1.65

V

IF=450A,VGE=0V,Tvj=150oC

1.35

IF=450A,VGE=0V,Tvj=175oC

1.30

IF=1000A,VGE=0V,Tvj=25oC

1.80

IF=1000A,VGE=0V,Tvj=175oC

1.80

Qr

Recovered Charge

VR=400V,IF=450A,

-di/dt=7809A/μs,VGE=-8V LS=24nH,Tvj=25oC

18.5

μC

IRM

Peak Reverse

Recovery Current

303

A

Erec

Reverse Recovery Energy

3.72

mJ

Qr

Recovered Charge

VR=400V,IF=450A,

-di/dt=6940A/μs,VGE=-8V LS=24nH,Tvj=150oC

36.1

μC

IRM

Peak Reverse

Recovery Current

376

A

Erec

Reverse Recovery Energy

8.09

mJ

Qr

Recovered Charge

VR=400V,IF=450A,

-di/dt=6748A/μs,VGE=-8V LS=24nH,Tvj=175oC

40.1

μC

IRM

Peak Reverse

Recovery Current

383

A

Erec

Reverse Recovery Energy

9.01

mJ

NTC Characteristics TF=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100 oC,R100=493.3Ω

-5

5

%

P25

Power

Dissipation

20.0

mW

B25/50

B-value

R2=R25exp[B25/50(1/T2- 1/(298.15K))]

3375

K

B25/80

B-value

R2=R25exp[B25/80(1/T2- 1/(298.15K))]

3411

K

B25/100

B-value

R2=R25exp[B25/100(1/T2- 1/(298.15K))]

3433

K

Module Characteristics TF=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

8

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.75

p

Maximum Pressure In Cooling Circuit

Tbaseplate<40oC

Tbaseplate >40oC

(relative pressure)

2.5 2.0

bar

RthJF

Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) V/t=10.0dm3/min,TF=75oC

0.068 0.105

0.078 0.120

K/W

M

Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4

3.6 1.8

4.4 2.2

N.m

G

Weight of Module

750

g

Outline

gd1000hta75p6ht-33

Equivalent Circuit Schematic

gd1000hta75p6ht-34

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