750V 1000A,
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Brief introduction
IGBT module,produced by STARPOWER. 750V 1000A,P6.
Features
Typical Applications
Absolute Maximum Ratings TF=25oC unless otherwise noted
IGBT
Symbol |
Description |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
750 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
ICN |
Implemented Collector Current |
1000 |
A |
IC |
Collector Current @ TF=125oC |
450 |
A |
ICM |
Pulsed Collector Current tp=1ms |
2000 |
A |
PD |
Maximum Power Dissipation @ TF=75oC Tvj=175oC |
1282 |
W |
Diode
Symbol |
Description |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
750 |
V |
IFN |
Implemented Collector Current |
1000 |
A |
IF |
Diode Continuous Forward Current |
450 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
2000 |
A |
Module
Symbol |
Description |
Value |
Unit |
Tvjmax |
Maximum Junction Temperature |
175 |
oC |
Tvjop |
Operating Junction Temperature continuous For 10s within a period of 30s,occurrence maximum 3000 times over lifetime |
-40 to +150 +150 to +175 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
dCreep |
Terminal to Heatsink Terminal to Terminal |
9.0 9.0 |
mm |
dClear |
Terminal to Heatsink Terminal to Terminal |
4.5 4.5 |
mm |
IGBT Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
||||||||
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=450A,VGE=15V, Tvj=25oC |
|
1.10 |
1.35 |
V |
||||||||
IC=450A,VGE=15V, Tvj=150oC |
|
1.10 |
|
|||||||||||
IC=450A,VGE=15V, Tvj=175oC |
|
1.10 |
|
|||||||||||
IC=1000A,VGE=15V, Tvj=25oC |
|
1.40 |
|
|||||||||||
IC=1000A,VGE=15V, Tvj=175oC |
|
1.60 |
|
|||||||||||
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=12.9mA,VCE=VGE, Tvj=25oC |
5.5 |
6.4 |
7.0 |
V |
||||||||
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tvj=25oC |
|
|
1.0 |
mA |
||||||||
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tvj=25oC |
|
|
400 |
nA |
||||||||
RGint |
Internal Gate Resistance |
|
|
1.2 |
|
Ω |
||||||||
Cies |
Input Capacitance |
VCE=50V,f=100kHz, VGE=0V |
|
66.7 |
|
nF |
||||||||
Coes |
Output Capacitance |
|
1.50 |
|
nF |
|||||||||
Cres |
Reverse Transfer Capacitance |
|
0.35 |
|
nF |
|||||||||
QG |
Gate Charge |
VCE =400V,IC =450A, VGE=-15…+15V |
|
4.74 |
|
μC |
||||||||
td(on) |
Turn-On Delay Time |
VCC=400V,IC=450A, RGon=1.2Ω,RGoff=1.0Ω, VGE=-8V/+15V, LS=24nH, Tvj=25oC |
|
244 |
|
ns |
||||||||
tr |
Rise Time |
|
61 |
|
ns |
|||||||||
td(off) |
Turn-Off Delay Time |
|
557 |
|
ns |
|||||||||
tf |
Fall Time |
|
133 |
|
ns |
|||||||||
Eon |
Turn-On Switching Loss |
|
11.0 |
|
mJ |
|||||||||
Eoff |
Turn-Off Switching Loss |
|
22.8 |
|
mJ |
|||||||||
td(on) |
Turn-On Delay Time |
VCC=400V,IC=450A, RGon=1.2Ω,RGoff=1.0Ω, VGE=-8V/+15V, LS=24nH, Tvj=150oC |
|
260 |
|
ns |
||||||||
tr |
Rise Time |
|
68 |
|
ns |
|||||||||
td(off) |
Turn-Off Delay Time |
|
636 |
|
ns |
|||||||||
tf |
Fall Time |
|
226 |
|
ns |
|||||||||
Eon |
Turn-On Switching Loss |
|
16.9 |
|
mJ |
|||||||||
Eoff |
Turn-Off Switching Loss |
|
32.2 |
|
mJ |
|||||||||
td(on) |
Turn-On Delay Time |
VCC=400V,IC=450A, RGon=1.2Ω,RGoff=1.0Ω, VGE=-8V/+15V, LS=24nH, Tvj=175oC |
|
264 |
|
ns |
||||||||
tr |
Rise Time |
|
70 |
|
ns |
|||||||||
td(off) |
Turn-Off Delay Time |
|
673 |
|
ns |
|||||||||
tf |
Fall Time |
|
239 |
|
ns |
|||||||||
Eon |
Turn-On Switching Loss |
|
19.2 |
|
mJ |
|||||||||
Eoff |
Turn-Off Switching Loss |
|
33.6 |
|
mJ |
|||||||||
ISC |
SC Data |
tP≤6μs,VGE=15V, Tvj=25oC,VCC=400V, VCEM≤750V |
|
4900 |
|
A |
||||||||
|
|
tP≤3μs,VGE=15V, Tvj=175oC,VCC=400V, VCEM≤750V |
|
3800 |
|
|
||||||||
Diode Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
VF |
Diode Forward Voltage |
IF=450A,VGE=0V,Tvj=25oC |
|
1.40 |
1.65 |
V |
IF=450A,VGE=0V,Tvj=150oC |
|
1.35 |
|
|||
IF=450A,VGE=0V,Tvj=175oC |
|
1.30 |
|
|||
IF=1000A,VGE=0V,Tvj=25oC |
|
1.80 |
|
|||
IF=1000A,VGE=0V,Tvj=175oC |
|
1.80 |
|
|||
Qr |
Recovered Charge |
VR=400V,IF=450A, -di/dt=7809A/μs,VGE=-8V LS=24nH,Tvj=25oC |
|
18.5 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
303 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
3.72 |
|
mJ |
|
Qr |
Recovered Charge |
VR=400V,IF=450A, -di/dt=6940A/μs,VGE=-8V LS=24nH,Tvj=150oC |
|
36.1 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
376 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
8.09 |
|
mJ |
|
Qr |
Recovered Charge |
VR=400V,IF=450A, -di/dt=6748A/μs,VGE=-8V LS=24nH,Tvj=175oC |
|
40.1 |
|
μC |
IRM |
Peak Reverse Recovery Current |
|
383 |
|
A |
|
Erec |
Reverse Recovery Energy |
|
9.01 |
|
mJ |
NTC Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
R25 |
Rated Resistance |
|
|
5.0 |
|
kΩ |
∆R/R |
Deviation of R100 |
TC=100 oC,R100=493.3Ω |
-5 |
|
5 |
% |
P25 |
Power Dissipation |
|
|
|
20.0 |
mW |
B25/50 |
B-value |
R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
|
3375 |
|
K |
B25/80 |
B-value |
R2=R25exp[B25/80(1/T2- 1/(298.15K))] |
|
3411 |
|
K |
B25/100 |
B-value |
R2=R25exp[B25/100(1/T2- 1/(298.15K))] |
|
3433 |
|
K |
Module Characteristics TF=25oC unless otherwise noted
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Unit |
LCE |
Stray Inductance |
|
8 |
|
nH |
RCC’+EE’ |
Module Lead Resistance, Terminal to Chip |
|
0.75 |
|
mΩ |
|
p |
Maximum Pressure In Cooling Circuit Tbaseplate<40oC Tbaseplate >40oC (relative pressure) |
|
|
2.5 2.0 |
bar |
|
RthJF |
Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC |
|
0.068 0.105 |
0.078 0.120 |
K/W |
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4 |
3.6 1.8 |
|
4.4 2.2 |
N.m |
G |
Weight of Module |
|
750 |
|
g |
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