GD1000HFA75N5HT

Introduction

Brief introduction

IGBT module,produced by STARPOWER. 1000V 750A.

Features

Low VCE(sat) Trench IGBT technology
Low switching losses
6μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175℃
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper pinfin baseplate using Si₃N₄ AMB technology

Typical Applications

Automotive application
Hybrid and electric vehicle
Inverter for motor drive

Absolute Maximum Ratings TF=25oC unless otherwise noted

IGBT

Symbol	Description	Values	Unit
VCES	Collector-Emitter Voltage	750	V
VGES	Gate-Emitter Voltage	±20	V
ICN	Implemented Collector Current	1000	A
IC	Collector Current Tvj=175oC	680	A
ICM	Pulsed Collector Current tp=1ms	1360	A
PD	Maximum Power Dissipation @ TF=75oC Tvj=175oC	1086	W

Diode

Symbol	Description	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	750	V
IFN	Implemented Collector Current	1000	A
IF	Diode Continuous Forward Current	680	A
IFM	Diode Maximum Forward Current tp=1ms	1360	A

Module

Symbol	Description	Value	Unit
Tvjmax	Maximum Junction Temperature	175	oC
Tvjop	Operating Junction Temperature continuous	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

IGBT Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=680A,VGE=15V, Tvj=25oC		1.25	1.50	V
		IC=680A,VGE=15V, Tvj=150oC		1.35
		IC=680A,VGE=15V, Tvj=175oC		1.40
		IC=1000A,VGE=15V, Tvj=25oC		1.45
		IC=1000A,VGE=15V, Tvj=175oC		1.70
VGE(th)	Gate-Emitter Threshold Voltage	IC=9.60mA,VCE=VGE, Tvj=25oC	5.5	6.5	7.0	V
VGE(th)	Gate-Emitter Threshold Voltage	IC=9.60mA,VCE=VGE, Tvj=175oC		3.5		V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tvj=25oC			1.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tvj=25oC			400	nA
RGint	Internal Gate Resistance			1.0		Ω
Cies	Input Capacitance	VCE=50V,f=100kHz, VGE=0V		72.3		nF
Coes	Output Capacitance			1.51		nF
Cres	Reverse Transfer Capacitance			0.32		nF
QG	Gate Charge	VCE =400V, IC=680A, VGE=-10…+15V		4.10		μC
td(on)	Turn-On Delay Time	VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V, Tvj=25oC		196		ns
tr	Rise Time			50		ns
td(off)	Turn-Off Delay Time			407		ns
tf	Fall Time			125		ns
Eon	Turn-On Switching Loss			11.1		mJ
Eoff	Turn-Off Switching Loss			29.1		mJ
td(on)	Turn-On Delay Time	VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V, Tvj=150oC		222		ns
tr	Rise Time			63		ns
td(off)	Turn-Off Delay Time			471		ns
tf	Fall Time			178		ns
Eon	Turn-On Switching Loss			19.7		mJ
Eoff	Turn-Off Switching Loss			37.4		mJ
td(on)	Turn-On Delay Time	VCC=400V,IC=680A, RG=0.22Ω,LS=16nH, VGE=-10V/+15V, Tvj=175oC		224		ns
tr	Rise Time			68		ns
td(off)	Turn-Off Delay Time			490		ns
tf	Fall Time			194		ns
Eon	Turn-On Switching Loss			21.7		mJ
Eoff	Turn-Off Switching Loss			39.5		mJ
ISC	SC Data	tP≤6μs,VGE=15V,		4000		A
		Tvj=25oC,VCC=450V, VCEM≤750V
		tP≤3μs,VGE=15V, Tvj=175oC,VCC=450V, VCEM≤750V		3300

Diode Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=680A,VGE=0V,Tvj=25oC		1.60	2.05	V
		IF=680A,VGE=0V,Tvj=150oC		1.60
		IF=680A,VGE=0V,Tvj=175oC		1.55
		IF=1000A,VGE=0V,Tvj=25oC		1.80
		IF=1000A,VGE=0V,Tvj=175oC		1.75
Qr	Recovered Charge	VR=400V,IF=680A, -di/dt=15030A/μs,VGE=-10V, LS=16nH,Tvj=25oC		19.9		μC
IRM	Peak Reverse Recovery Current			458		A
Erec	Reverse Recovery Energy			6.10		mJ
Qr	Recovered Charge	VR=400V,IF=680A, -di/dt=12360A/μs,VGE=-10V, LS=16nH,Tvj=150oC		29.7		μC
IRM	Peak Reverse Recovery Current			504		A
Erec	Reverse Recovery Energy			9.70		mJ
Qr	Recovered Charge	VR=400V,IF=680A, -di/dt=11740A/μs,VGE=-10V, LS=16nH,Tvj=175oC		34.5		μC
IRM	Peak Reverse Recovery Current			526		A
Erec	Reverse Recovery Energy			11.0		mJ

PTC Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
R	Nominal Resistance	TC=0 oC TC=150 oC		1000 1573		Ω Ω
TCR	Temperature Coefficient			0.38		%/K
TSH	Self Heating	TC=0 oC Im=0.1...0.3mA		0.4		K/mW

Module Characteristics TF=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance		5		nH
p	Maximum Pressure In Cooling Circuit			2.5	bar
RthJF	Junction-to-Cooling Fluid (perIGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=8.0dm3/min,TF=65oC		0.080 0.115		K/W
M	Terminal Connection Torque, Screw M5 Mounting Torque, Screw M5	5.4 5.4		6.6 6.6	N.m
G	Weight of Module		220		g